Design of 30-56.5 GHz resistive single-ended mixer in 0.15μm GaN/SiC technology

Nethini T. Weerathunge*, Sudipta Chakraborty, Simon J. Mahon, Benny Wu, Michael Heimlich

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

A wideband resistive mixer from 30 GHz to 56.5 GHz implemented in WIN Semiconductor's newly released 0.15μm GaN/SiC HEMT process is presented in this paper. The mixer exhibits a conversion loss of 10 dB at the midband for an optimum input LO power of 12 dBm. The LO-IF and RF-IF isolations are higher than 49 dB and 34 dB respectively. Mixer's input 1dB compression point is 18 dBm. The chip size including the pads is 1 mm2, and the circuit's active area is only 0.29 mm2.

Original languageEnglish
Title of host publication2020 4th Australian Microwave Symposium (AMS)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1-2
Number of pages2
ISBN (Electronic)9781728110493
ISBN (Print)9781728110509
DOIs
Publication statusPublished - 2020
Event4th Australian Microwave Symposium, AMS 2020 - Sydney, Australia
Duration: 13 Feb 202014 Feb 2020

Conference

Conference4th Australian Microwave Symposium, AMS 2020
CountryAustralia
CitySydney
Period13/02/2014/02/20

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