Abstract
A wideband resistive mixer from 30 GHz to 56.5 GHz implemented in WIN Semiconductor's newly released 0.15μm GaN/SiC HEMT process is presented in this paper. The mixer exhibits a conversion loss of 10 dB at the midband for an optimum input LO power of 12 dBm. The LO-IF and RF-IF isolations are higher than 49 dB and 34 dB respectively. Mixer's input 1dB compression point is 18 dBm. The chip size including the pads is 1 mm2, and the circuit's active area is only 0.29 mm2.
Original language | English |
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Title of host publication | 2020 4th Australian Microwave Symposium (AMS) |
Place of Publication | Piscataway, NJ |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 1-2 |
Number of pages | 2 |
ISBN (Electronic) | 9781728110493 |
ISBN (Print) | 9781728110509 |
DOIs | |
Publication status | Published - 2020 |
Event | 4th Australian Microwave Symposium, AMS 2020 - Sydney, Australia Duration: 13 Feb 2020 → 14 Feb 2020 |
Conference
Conference | 4th Australian Microwave Symposium, AMS 2020 |
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Country/Territory | Australia |
City | Sydney |
Period | 13/02/20 → 14/02/20 |