Design of 30-56.5 GHz resistive single-ended mixer in 0.15μm GaN/SiC technology

Nethini T. Weerathunge; Sudipta Chakraborty; Simon J. Mahon; Benny Wu; Michael Heimlich

doi:10.1109/AMS48904.2020.9059412

Design of 30-56.5 GHz resistive single-ended mixer in 0.15μm GaN/SiC technology

Nethini T. Weerathunge^*, Sudipta Chakraborty, Simon J. Mahon, Benny Wu, Michael Heimlich

^*Corresponding author for this work

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

6 Citations (Scopus)

Abstract

A wideband resistive mixer from 30 GHz to 56.5 GHz implemented in WIN Semiconductor's newly released 0.15μm GaN/SiC HEMT process is presented in this paper. The mixer exhibits a conversion loss of 10 dB at the midband for an optimum input LO power of 12 dBm. The LO-IF and RF-IF isolations are higher than 49 dB and 34 dB respectively. Mixer's input 1dB compression point is 18 dBm. The chip size including the pads is 1 mm², and the circuit's active area is only 0.29 mm².

Original language	English
Title of host publication	2020 4th Australian Microwave Symposium (AMS)
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-2
Number of pages	2
ISBN (Electronic)	9781728110493
ISBN (Print)	9781728110509
DOIs	https://doi.org/10.1109/AMS48904.2020.9059412
Publication status	Published - 2020
Event	4th Australian Microwave Symposium, AMS 2020 - Sydney, Australia Duration: 13 Feb 2020 → 14 Feb 2020

Conference

Conference	4th Australian Microwave Symposium, AMS 2020
Country/Territory	Australia
City	Sydney
Period	13/02/20 → 14/02/20

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10.1109/AMS48904.2020.9059412

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@inproceedings{071da18310594fc29c83e6727f35c8eb,

title = "Design of 30-56.5 GHz resistive single-ended mixer in 0.15μm GaN/SiC technology",

abstract = "A wideband resistive mixer from 30 GHz to 56.5 GHz implemented in WIN Semiconductor's newly released 0.15μm GaN/SiC HEMT process is presented in this paper. The mixer exhibits a conversion loss of 10 dB at the midband for an optimum input LO power of 12 dBm. The LO-IF and RF-IF isolations are higher than 49 dB and 34 dB respectively. Mixer's input 1dB compression point is 18 dBm. The chip size including the pads is 1 mm2, and the circuit's active area is only 0.29 mm2.",

author = "Weerathunge, \{Nethini T.\} and Sudipta Chakraborty and Mahon, \{Simon J.\} and Benny Wu and Michael Heimlich",

year = "2020",

doi = "10.1109/AMS48904.2020.9059412",

language = "English",

isbn = "9781728110509",

pages = "1--2",

booktitle = "2020 4th Australian Microwave Symposium (AMS)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "4th Australian Microwave Symposium, AMS 2020 ; Conference date: 13-02-2020 Through 14-02-2020",

}

Weerathunge, NT, Chakraborty, S , Mahon, SJ, Wu, B & Heimlich, M 2020, Design of 30-56.5 GHz resistive single-ended mixer in 0.15μm GaN/SiC technology. in 2020 4th Australian Microwave Symposium (AMS). Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 1-2, 4th Australian Microwave Symposium, AMS 2020, Sydney, Australia, 13/02/20. https://doi.org/10.1109/AMS48904.2020.9059412

Design of 30-56.5 GHz resistive single-ended mixer in 0.15μm GaN/SiC technology. / Weerathunge, Nethini T.; Chakraborty, Sudipta ; Mahon, Simon J. et al.
2020 4th Australian Microwave Symposium (AMS). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2020. p. 1-2.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Design of 30-56.5 GHz resistive single-ended mixer in 0.15μm GaN/SiC technology

AU - Weerathunge, Nethini T.

AU - Chakraborty, Sudipta

AU - Mahon, Simon J.

AU - Wu, Benny

AU - Heimlich, Michael

PY - 2020

Y1 - 2020

N2 - A wideband resistive mixer from 30 GHz to 56.5 GHz implemented in WIN Semiconductor's newly released 0.15μm GaN/SiC HEMT process is presented in this paper. The mixer exhibits a conversion loss of 10 dB at the midband for an optimum input LO power of 12 dBm. The LO-IF and RF-IF isolations are higher than 49 dB and 34 dB respectively. Mixer's input 1dB compression point is 18 dBm. The chip size including the pads is 1 mm2, and the circuit's active area is only 0.29 mm2.

AB - A wideband resistive mixer from 30 GHz to 56.5 GHz implemented in WIN Semiconductor's newly released 0.15μm GaN/SiC HEMT process is presented in this paper. The mixer exhibits a conversion loss of 10 dB at the midband for an optimum input LO power of 12 dBm. The LO-IF and RF-IF isolations are higher than 49 dB and 34 dB respectively. Mixer's input 1dB compression point is 18 dBm. The chip size including the pads is 1 mm2, and the circuit's active area is only 0.29 mm2.

UR - https://www.scopus.com/pages/publications/85084181127

U2 - 10.1109/AMS48904.2020.9059412

DO - 10.1109/AMS48904.2020.9059412

M3 - Conference proceeding contribution

AN - SCOPUS:85084181127

SN - 9781728110509

SP - 1

EP - 2

BT - 2020 4th Australian Microwave Symposium (AMS)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 4th Australian Microwave Symposium, AMS 2020

Y2 - 13 February 2020 through 14 February 2020

ER -

Design of 30-56.5 GHz resistive single-ended mixer in 0.15μm GaN/SiC technology

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