Design of a 28 GHz power amplifier in 0.15 μm GaN technology

Jakov Mihaljevic*, Sudipta Chakraborty, Leigh E. Milner, Simon J. Mahon, Michael Heimlich

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

1 Citation (Scopus)


This paper presents the design and simulation of two single-stage power amplifiers (PAs) to determine the performance capabilities of WIN Semiconductors 0.15 μm Gallium Nitride (GaN)-on-SiC process. Subsequently a 28 GHz two-stage PA is presented for potential integration into 5G transceiver applications.

A 2×100 gate-width device was used to develop a driving stage PA (MMIC1) which produced a simulated 12.8 dB small signal gain at the desired 28 GHz. A 4×100 gate-width device was used to characterize an output stage PA (MMIC2) producing 33 dBm power out, PAE of 41%, and a power gain of 11.2 dB. The subsequently designed two-stage PA, MMIC3, combines MMIC1 and MMIC2 and provides a peak small signal gain of 22.5 dB, peak power output of 33 dBm, peak PAE of 31% and peak power gain of 22.4 dB.

Original languageEnglish
Title of host publication2020 4th Australian Microwave Symposium (AMS)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages2
ISBN (Electronic)9781728110493
ISBN (Print)9781728110509
Publication statusPublished - 2020
Event4th Australian Microwave Symposium, AMS 2020 - Sydney, Australia
Duration: 13 Feb 202014 Feb 2020


Conference4th Australian Microwave Symposium, AMS 2020


  • power amplifier
  • GaN
  • PAE
  • millimeter-wave


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