Design of a 28 GHz power amplifier in 0.15 μm GaN technology

Jakov Mihaljevic; Sudipta Chakraborty; Leigh E. Milner; Simon J. Mahon; Michael Heimlich

doi:10.1109/AMS48904.2020.9059517

Design of a 28 GHz power amplifier in 0.15 μm GaN technology

Jakov Mihaljevic^*, Sudipta Chakraborty, Leigh E. Milner, Simon J. Mahon, Michael Heimlich

^*Corresponding author for this work

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

1 Citation (Scopus)

Abstract

This paper presents the design and simulation of two single-stage power amplifiers (PAs) to determine the performance capabilities of WIN Semiconductors 0.15 μm Gallium Nitride (GaN)-on-SiC process. Subsequently a 28 GHz two-stage PA is presented for potential integration into 5G transceiver applications.

A 2×100 gate-width device was used to develop a driving stage PA (MMIC1) which produced a simulated 12.8 dB small signal gain at the desired 28 GHz. A 4×100 gate-width device was used to characterize an output stage PA (MMIC2) producing 33 dBm power out, PAE of 41%, and a power gain of 11.2 dB. The subsequently designed two-stage PA, MMIC3, combines MMIC1 and MMIC2 and provides a peak small signal gain of 22.5 dB, peak power output of 33 dBm, peak PAE of 31% and peak power gain of 22.4 dB.

Original language	English
Title of host publication	2020 4th Australian Microwave Symposium (AMS)
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-2
Number of pages	2
ISBN (Electronic)	9781728110493
ISBN (Print)	9781728110509
DOIs	https://doi.org/10.1109/AMS48904.2020.9059517
Publication status	Published - 2020
Event	4th Australian Microwave Symposium, AMS 2020 - Sydney, Australia Duration: 13 Feb 2020 → 14 Feb 2020

Conference

Conference	4th Australian Microwave Symposium, AMS 2020
Country/Territory	Australia
City	Sydney
Period	13/02/20 → 14/02/20

Keywords

power amplifier
GaN
PAE
millimeter-wave

Access to Document

10.1109/AMS48904.2020.9059517

Cite this

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title = "Design of a 28 GHz power amplifier in 0.15 μm GaN technology",

abstract = "This paper presents the design and simulation of two single-stage power amplifiers (PAs) to determine the performance capabilities of WIN Semiconductors 0.15 μm Gallium Nitride (GaN)-on-SiC process. Subsequently a 28 GHz two-stage PA is presented for potential integration into 5G transceiver applications. A 2×100 gate-width device was used to develop a driving stage PA (MMIC1) which produced a simulated 12.8 dB small signal gain at the desired 28 GHz. A 4×100 gate-width device was used to characterize an output stage PA (MMIC2) producing 33 dBm power out, PAE of 41%, and a power gain of 11.2 dB. The subsequently designed two-stage PA, MMIC3, combines MMIC1 and MMIC2 and provides a peak small signal gain of 22.5 dB, peak power output of 33 dBm, peak PAE of 31% and peak power gain of 22.4 dB.",

keywords = "power amplifier, GaN, PAE, millimeter-wave",

author = "Jakov Mihaljevic and Sudipta Chakraborty and Milner, {Leigh E.} and Mahon, {Simon J.} and Michael Heimlich",

year = "2020",

doi = "10.1109/AMS48904.2020.9059517",

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booktitle = "2020 4th Australian Microwave Symposium (AMS)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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note = "4th Australian Microwave Symposium, AMS 2020 ; Conference date: 13-02-2020 Through 14-02-2020",

}

Mihaljevic, J , Chakraborty, S, Milner, LE, Mahon, SJ & Heimlich, M 2020, Design of a 28 GHz power amplifier in 0.15 μm GaN technology. in 2020 4th Australian Microwave Symposium (AMS). Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 1-2, 4th Australian Microwave Symposium, AMS 2020, Sydney, Australia, 13/02/20. https://doi.org/10.1109/AMS48904.2020.9059517

Design of a 28 GHz power amplifier in 0.15 μm GaN technology. / Mihaljevic, Jakov ; Chakraborty, Sudipta; Milner, Leigh E. et al.
2020 4th Australian Microwave Symposium (AMS). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2020. p. 1-2.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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AU - Mahon, Simon J.

AU - Heimlich, Michael

PY - 2020

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N2 - This paper presents the design and simulation of two single-stage power amplifiers (PAs) to determine the performance capabilities of WIN Semiconductors 0.15 μm Gallium Nitride (GaN)-on-SiC process. Subsequently a 28 GHz two-stage PA is presented for potential integration into 5G transceiver applications. A 2×100 gate-width device was used to develop a driving stage PA (MMIC1) which produced a simulated 12.8 dB small signal gain at the desired 28 GHz. A 4×100 gate-width device was used to characterize an output stage PA (MMIC2) producing 33 dBm power out, PAE of 41%, and a power gain of 11.2 dB. The subsequently designed two-stage PA, MMIC3, combines MMIC1 and MMIC2 and provides a peak small signal gain of 22.5 dB, peak power output of 33 dBm, peak PAE of 31% and peak power gain of 22.4 dB.

AB - This paper presents the design and simulation of two single-stage power amplifiers (PAs) to determine the performance capabilities of WIN Semiconductors 0.15 μm Gallium Nitride (GaN)-on-SiC process. Subsequently a 28 GHz two-stage PA is presented for potential integration into 5G transceiver applications. A 2×100 gate-width device was used to develop a driving stage PA (MMIC1) which produced a simulated 12.8 dB small signal gain at the desired 28 GHz. A 4×100 gate-width device was used to characterize an output stage PA (MMIC2) producing 33 dBm power out, PAE of 41%, and a power gain of 11.2 dB. The subsequently designed two-stage PA, MMIC3, combines MMIC1 and MMIC2 and provides a peak small signal gain of 22.5 dB, peak power output of 33 dBm, peak PAE of 31% and peak power gain of 22.4 dB.

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ER -

Design of a 28 GHz power amplifier in 0.15 μm GaN technology

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