This paper presents the design and simulation of two single-stage power amplifiers (PAs) to determine the performance capabilities of WIN Semiconductors 0.15 μm Gallium Nitride (GaN)-on-SiC process. Subsequently a 28 GHz two-stage PA is presented for potential integration into 5G transceiver applications.
A 2×100 gate-width device was used to develop a driving stage PA (MMIC1) which produced a simulated 12.8 dB small signal gain at the desired 28 GHz. A 4×100 gate-width device was used to characterize an output stage PA (MMIC2) producing 33 dBm power out, PAE of 41%, and a power gain of 11.2 dB. The subsequently designed two-stage PA, MMIC3, combines MMIC1 and MMIC2 and provides a peak small signal gain of 22.5 dB, peak power output of 33 dBm, peak PAE of 31% and peak power gain of 22.4 dB.
|Title of host publication||2020 4th Australian Microwave Symposium (AMS)|
|Place of Publication||Piscataway, NJ|
|Publisher||Institute of Electrical and Electronics Engineers (IEEE)|
|Number of pages||2|
|Publication status||Published - 2020|
|Event||4th Australian Microwave Symposium, AMS 2020 - Sydney, Australia|
Duration: 13 Feb 2020 → 14 Feb 2020
|Conference||4th Australian Microwave Symposium, AMS 2020|
|Period||13/02/20 → 14/02/20|
- power amplifier