Design of a 28 GHz power amplifier in 0.15 μm GaN technology

Jakov Mihaljevic*, Sudipta Chakraborty, Leigh E. Milner, Simon J. Mahon, Michael Heimlich

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

Abstract

This paper presents the design and simulation of two single-stage power amplifiers (PAs) to determine the performance capabilities of WIN Semiconductors 0.15 μm Gallium Nitride (GaN)-on-SiC process. Subsequently a 28 GHz two-stage PA is presented for potential integration into 5G transceiver applications.

A 2×100 gate-width device was used to develop a driving stage PA (MMIC1) which produced a simulated 12.8 dB small signal gain at the desired 28 GHz. A 4×100 gate-width device was used to characterize an output stage PA (MMIC2) producing 33 dBm power out, PAE of 41%, and a power gain of 11.2 dB. The subsequently designed two-stage PA, MMIC3, combines MMIC1 and MMIC2 and provides a peak small signal gain of 22.5 dB, peak power output of 33 dBm, peak PAE of 31% and peak power gain of 22.4 dB.

Original languageEnglish
Title of host publication2020 4th Australian Microwave Symposium (AMS)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1-2
Number of pages2
ISBN (Electronic)9781728110493
ISBN (Print)9781728110509
DOIs
Publication statusPublished - 2020
Event4th Australian Microwave Symposium, AMS 2020 - Sydney, Australia
Duration: 13 Feb 202014 Feb 2020

Conference

Conference4th Australian Microwave Symposium, AMS 2020
CountryAustralia
CitySydney
Period13/02/2014/02/20

Keywords

  • power amplifier
  • GaN
  • PAE
  • millimeter-wave

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