Design of bottom silicon solar cell for multijunction devices

Ibraheem Al Mansouri, Stephen Bremner, Anita Ho-Baillie, Hamid Mehrvarz, Xiaojing Hao, Gavin Conibeer, Martin A. Green, Tyler J. Grassman, John A. Carlin, Steven A. Ringel

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

3 Citations (Scopus)

Abstract

We report on efforts to design high efficiency silicon sub-cells for use in multijunction stack devices. Both simulation and experimental work have been performed looking at a silicon solar cell under a truncated spectrum due to the optical filtering of the upper layers in the multijunction stack. The truncation for our case occurs for photon energies above 1.5 e V. Good agreement is seen between the modeling and experiments, with very different design features being identified, as compared to the design for a high efficiency solar cell under a full spectrum. When a well passivated front surface is achieved i.e. low interface recombination velocity, we see that a lightly-doped emitter profile maximizes the open circuit voltage (V oc ). When a high interface recombination is present, however, heavily-doped profiles exhibit the higher V oc values. The impact on short circuit current (J sc ) is seen to be minimal even with large variations in the interface recombination and emitter profiles.

Original languageEnglish
Title of host publication2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages3310-3314
Number of pages5
ISBN (Electronic)9781479932993, 9781479932986
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: 16 Jun 201321 Jun 2013

Publication series

Name
ISSN (Print)0160-8371

Conference

Conference39th IEEE Photovoltaic Specialists Conference, PVSC 2013
CountryUnited States
CityTampa, FL
Period16/06/1321/06/13

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