Abstract
The paper briefly reviews commonly used attenuator topologies. The requirements of a FET I-V model for nonlinear simulation of attenuator circuits are stated. An improved MESFET/HEMT I-V model is then described. The properties of ac coupled stacked cold FET structures is briefly discussed. Measurements on two pi FET attenuators and a double hybrid FET attenuator are presented.
Original language | English |
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Pages (from-to) | 61-68 |
Number of pages | 8 |
Journal | IEE Colloquium (Digest) |
Issue number | 42 |
Publication status | Published - 19 Jan 2001 |