Designing low distortion continuously variable attenuators for microwave frequencies

D. R. Webster; M. T. Hutabarat; A. E. Parker; D. G. Haigh

Designing low distortion continuously variable attenuators for microwave frequencies

D. R. Webster^*, M. T. Hutabarat, A. E. Parker, D. G. Haigh

^*Corresponding author for this work

Department of Physics and Astronomy

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

The paper briefly reviews commonly used attenuator topologies. The requirements of a FET I-V model for nonlinear simulation of attenuator circuits are stated. An improved MESFET/HEMT I-V model is then described. The properties of ac coupled stacked cold FET structures is briefly discussed. Measurements on two pi FET attenuators and a double hybrid FET attenuator are presented.

Original language	English
Pages (from-to)	61-68
Number of pages	8
Journal	IEE Colloquium (Digest)
Issue number	42
Publication status	Published - 19 Jan 2001

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Webster, D. R., Hutabarat, M. T., Parker, A. E., & Haigh, D. G. (2001). Designing low distortion continuously variable attenuators for microwave frequencies. IEE Colloquium (Digest), (42), 61-68.

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abstract = "The paper briefly reviews commonly used attenuator topologies. The requirements of a FET I-V model for nonlinear simulation of attenuator circuits are stated. An improved MESFET/HEMT I-V model is then described. The properties of ac coupled stacked cold FET structures is briefly discussed. Measurements on two pi FET attenuators and a double hybrid FET attenuator are presented.",

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AB - The paper briefly reviews commonly used attenuator topologies. The requirements of a FET I-V model for nonlinear simulation of attenuator circuits are stated. An improved MESFET/HEMT I-V model is then described. The properties of ac coupled stacked cold FET structures is briefly discussed. Measurements on two pi FET attenuators and a double hybrid FET attenuator are presented.

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