Designing low distortion continuously variable attenuators for microwave frequencies

D. R. Webster*, M. T. Hutabarat, A. E. Parker, D. G. Haigh

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The paper briefly reviews commonly used attenuator topologies. The requirements of a FET I-V model for nonlinear simulation of attenuator circuits are stated. An improved MESFET/HEMT I-V model is then described. The properties of ac coupled stacked cold FET structures is briefly discussed. Measurements on two pi FET attenuators and a double hybrid FET attenuator are presented.

Original languageEnglish
Pages (from-to)61-68
Number of pages8
JournalIEE Colloquium (Digest)
Issue number42
Publication statusPublished - 19 Jan 2001

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