The paper briefly reviews commonly used attenuator topologies. The requirements of a FET I-V model for nonlinear simulation of attenuator circuits are stated. An improved MESFET/HEMT I-V model is then described. The properties of ac coupled stacked cold FET structures is briefly discussed. Measurements on two pi FET attenuators and a double hybrid FET attenuator are presented.
|Number of pages||8|
|Journal||IEE Colloquium (Digest)|
|Publication status||Published - 19 Jan 2001|