Designing low distortion continuously variable attenuators for microwave frequencies

D. R. Webster, M. T. Hutabarat, A. E. Parker, D. G. Haigh

Research output: Contribution to Newspaper/Magazine/WebsiteArticle

Abstract

The paper briefly reviews commonly used attenuator topologies. The requirements of an FET I-V model for nonlinear simulation of attenuator circuits are stated. An improved MESFET/HEMT I-V model is then described. The properties of ac coupled stacked cold FET structures are briefly discussed. Measurements on two pi FET attenuators and a double hybrid FET attenuator are presented.
Original languageEnglish
Pages171-173
Number of pages3
No.2001/042
Specialist publicationIEE seminar low power IC design
PublisherInstitution of Electrical Engineers
DOIs
Publication statusPublished - 2001

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