Detailed analysis of absorption data for indium nitride

K. S.A. Butcher*, M. Wintrebert-Fouquet, P. P.T. Chen, H. Timmers, S. K. Shrestha

*Corresponding author for this work

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

It is shown that the 0.7eV band gap recently announced for InN is actually due to a sub band gap deep level trap with |s〉 like symmetry. This level had been known in the literature, but was previously misinterpreted as a deep level trap with |p〉 like symmetry. It is also shown that proper interpretation of the absorption data for InN requires that the energy dependence of the refractive index be taken into account.

Original languageEnglish
Pages (from-to)351-354
Number of pages4
JournalMaterials Science in Semiconductor Processing
Volume6
Issue number5-6
DOIs
Publication statusPublished - Oct 2003

Keywords

  • Absorption
  • Band gap
  • Deep level traps
  • Indium nitride

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