Detailed analysis of absorption data for indium nitride

K. S.A. Butcher*, M. Wintrebert-Fouquet, P. P.T. Chen, H. Timmers, S. K. Shrestha

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    23 Citations (Scopus)

    Abstract

    It is shown that the 0.7eV band gap recently announced for InN is actually due to a sub band gap deep level trap with |s〉 like symmetry. This level had been known in the literature, but was previously misinterpreted as a deep level trap with |p〉 like symmetry. It is also shown that proper interpretation of the absorption data for InN requires that the energy dependence of the refractive index be taken into account.

    Original languageEnglish
    Pages (from-to)351-354
    Number of pages4
    JournalMaterials Science in Semiconductor Processing
    Volume6
    Issue number5-6
    DOIs
    Publication statusPublished - Oct 2003

    Keywords

    • Absorption
    • Band gap
    • Deep level traps
    • Indium nitride

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