Abstract
It is shown that the 0.7eV band gap recently announced for InN is actually due to a sub band gap deep level trap with |s〉 like symmetry. This level had been known in the literature, but was previously misinterpreted as a deep level trap with |p〉 like symmetry. It is also shown that proper interpretation of the absorption data for InN requires that the energy dependence of the refractive index be taken into account.
Original language | English |
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Pages (from-to) | 351-354 |
Number of pages | 4 |
Journal | Materials Science in Semiconductor Processing |
Volume | 6 |
Issue number | 5-6 |
DOIs | |
Publication status | Published - Oct 2003 |
Keywords
- Absorption
- Band gap
- Deep level traps
- Indium nitride