Determination of device structure from GaAs/AlGaAs HEMT DC I-V characteristic curves

Simon John Mahon; David J. Skellern

doi:10.1109/16.129080

Determination of device structure from GaAs/AlGaAs HEMT DC I-V characteristic curves

Simon John Mahon, David J. Skellern

Department of Physics and Astronomy

Research output: Contribution to journal › Article

10 Citations (Scopus)

Abstract

A procedure for the inverse modeling of GaAs/AlGaAs HEMT structures from dc I-V characteristics is described. The procedure allows important structural parameters, including the aluminum fraction, dopant density, doped layer thickness, spacer layer thickness, physical gate length, source resistance, drain resistance, and the saturated electron velocity in the 2DEG and in the doped AlGaAs to be obtained. The accuracy of the inverse modeling procedure is established by comparison of the derived HEMT structure with experimental results.

Original language	English
Pages (from-to)	1041-1049
Number of pages	9
Journal	IEEE Transactions on Electron Devices
Volume	39
Issue number	5
DOIs	https://doi.org/10.1109/16.129080
Publication status	Published - May 1992

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title = "Determination of device structure from GaAs/AlGaAs HEMT DC I-V characteristic curves",

abstract = "A procedure for the inverse modeling of GaAs/AlGaAs HEMT structures from dc I-V characteristics is described. The procedure allows important structural parameters, including the aluminum fraction, dopant density, doped layer thickness, spacer layer thickness, physical gate length, source resistance, drain resistance, and the saturated electron velocity in the 2DEG and in the doped AlGaAs to be obtained. The accuracy of the inverse modeling procedure is established by comparison of the derived HEMT structure with experimental results.",

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AB - A procedure for the inverse modeling of GaAs/AlGaAs HEMT structures from dc I-V characteristics is described. The procedure allows important structural parameters, including the aluminum fraction, dopant density, doped layer thickness, spacer layer thickness, physical gate length, source resistance, drain resistance, and the saturated electron velocity in the 2DEG and in the doped AlGaAs to be obtained. The accuracy of the inverse modeling procedure is established by comparison of the derived HEMT structure with experimental results.

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