Abstract
A procedure for the inverse modeling of GaAs/AlGaAs HEMT structures from dc I-V characteristics is described. The procedure allows important structural parameters, including the aluminum fraction, dopant density, doped layer thickness, spacer layer thickness, physical gate length, source resistance, drain resistance, and the saturated electron velocity in the 2DEG and in the doped AlGaAs to be obtained. The accuracy of the inverse modeling procedure is established by comparison of the derived HEMT structure with experimental results.
Original language | English |
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Pages (from-to) | 1041-1049 |
Number of pages | 9 |
Journal | IEEE Transactions on Electron Devices |
Volume | 39 |
Issue number | 5 |
DOIs | |
Publication status | Published - May 1992 |