Determination of device structure from GaAs/AlGaAs HEMT DC I-V characteristic curves

Simon John Mahon, David J. Skellern

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

A procedure for the inverse modeling of GaAs/AlGaAs HEMT structures from dc I-V characteristics is described. The procedure allows important structural parameters, including the aluminum fraction, dopant density, doped layer thickness, spacer layer thickness, physical gate length, source resistance, drain resistance, and the saturated electron velocity in the 2DEG and in the doped AlGaAs to be obtained. The accuracy of the inverse modeling procedure is established by comparison of the derived HEMT structure with experimental results.

Original languageEnglish
Pages (from-to)1041-1049
Number of pages9
JournalIEEE Transactions on Electron Devices
Volume39
Issue number5
DOIs
Publication statusPublished - May 1992

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