Determining timing for isothermal pulsed-bias S-parameter measurements

Anthony Parker*, Jonathan Scott, James Rathmell, Mohamed Sayed

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    16 Citations (Scopus)


    S-parameters measured under pulsed conditions are shown to vary from their steady-state values with pulse measurement width and pulse repetition rate. A method is presented for determining suitable timing for isothermal, pulsed-bias, pulsed-RF, S-parameter measurement of GaAs devices. Variation of S-parameters with wafer temperature and with measurement duration and duty cycle are correlated.

    Original languageEnglish
    Pages (from-to)1707-1710
    Number of pages4
    JournalIEEE MTT-S International Microwave Symposium Digest
    Publication statusPublished - 1996


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