S-parameters measured under pulsed conditions are shown to vary from their steady-state values with pulse measurement width and pulse repetition rate. A method is presented for determining suitable timing for isothermal, pulsed-bias, pulsed-RF, S-parameter measurement of GaAs devices. Variation of S-parameters with wafer temperature and with measurement duration and duty cycle are correlated.
|Number of pages||4|
|Journal||IEEE MTT-S International Microwave Symposium Digest|
|Publication status||Published - 1996|