Abstract
S-parameters measured under pulsed conditions are shown to vary from their steady-state values with pulse measurement width and pulse repetition rate. A method is presented for determining suitable timing for isothermal, pulsed-bias, pulsed-RF, S-parameter measurement of GaAs devices. Variation of S-parameters with wafer temperature and with measurement duration and duty cycle are correlated.
Original language | English |
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Pages (from-to) | 1707-1710 |
Number of pages | 4 |
Journal | IEEE MTT-S International Microwave Symposium Digest |
Volume | 3 |
DOIs | |
Publication status | Published - 1996 |