Determining timing for isothermal pulsed-bias S-parameter measurements

Anthony Parker*, Jonathan Scott, James Rathmell, Mohamed Sayed

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


S-parameters measured under pulsed conditions are shown to vary from their steady-state values with pulse measurement width and pulse repetition rate. A method is presented for determining suitable timing for isothermal, pulsed-bias, pulsed-RF, S-parameter measurement of GaAs devices. Variation of S-parameters with wafer temperature and with measurement duration and duty cycle are correlated.

Original languageEnglish
Pages (from-to)1707-1710
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Publication statusPublished - 1996


Dive into the research topics of 'Determining timing for isothermal pulsed-bias S-parameter measurements'. Together they form a unique fingerprint.

Cite this