Development of all-semiconductor laser sources for studies of88sr+ ions confined in rf trap

Mitsuru Musha, Andrei Zvyagin, Ken Ichi Nakagawa, Motoichi Ohtsu

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Semiconductor-laser-based light sources have been developed for cooling and depopulating Sr+ ions confined in an rf trap. Single-mode laser oscillation at 422 nm and 21 μW power was obtained, which corresponds to transition 5s2Si½ -5p2P½ of Sr+. An external-cavity-stabilized semiconductor laser with 1.8 mW power has been developed for pumping ions back from the 4d2D(Formula Presented) metastable state to the cooling cycle. In this paper we present the reference spectrum for both lasers, which confirms the laser oscillation at appropriate transition of Sr+.

Original languageEnglish
Pages (from-to)1603-1607
Number of pages5
JournalJapanese Journal of Applied Physics
Volume33
Issue number3 S
DOIs
Publication statusPublished - 1994
Externally publishedYes

Keywords

  • 1.1 μm semiconductor laser
  • 1/f investigation
  • Grating feedback
  • Laser cooling
  • Optogalvanic signal
  • Rb absorption
  • Sr absorption
  • Sr ion trap

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