Abstract
A photonic device includes a silicon semiconductor based superlattice. The superlattice has a plurality of layers that form a plurality of repeating units. At least one of the layers in the repeating unit is an optically active layer with at least one species of rare earth ion.
Original language | English |
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Patent number | US7211821 B2 |
Priority date | 8/08/00 |
Publication status | Published - 2007 |
Externally published | Yes |