A photonic device includes a silicon semiconductor based superlattice. The superlattice has a plurality of layers that form a plurality of repeating units. At least one of the layers in the repeating unit is an optically active layer with at least one species of rare earth ion.
|IPC||H01L 31/0264,H01L 29/15,G02B 6/122,G02B 6/125,H01L 27/15,H01L 33/34|
|Publication status||Published - 25 Apr 2002|