Abstract
A photonic device includes a silicon semiconductor based superlattice. The superlattice has a plurality of layers that form a plurality of repeating units. At least one of the layers in the repeating unit is an optically active layer with at least one species of rare earth ion.
Original language | English |
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Patent number | US20020048289 |
IPC | H01L 31/0264,H01L 29/15,G02B 6/122,G02B 6/125,H01L 27/15,H01L 33/34 |
Priority date | 7/08/01 |
Publication status | Published - 25 Apr 2002 |
Externally published | Yes |