Abstract
In this work we show two different procedures of fabrication aiming towards the systematic positioning of single InAs quantum dots (QDs) coupled to a GaAs photonic crystal (PC) microcavity. The two approaches are based on the molecular beam epitaxial (MBE) growth of site-controlled QDs (SCQDs) on pre-patterned structures. The PC microcavity (PCM) is introduced previous or after the growth, on each case. We demonstrate the InAs SCQD nucleation on pre-patterned PCMs and a method to perform the QD nucleation respect to an etched ruler that is used to position the PC structure after growth. For both types of structures, we have carried out microphotoluminescence (μPL) spectroscopy experiments at 80 K and 4 K.
Original language | English |
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Title of host publication | ICTON 2011 |
Subtitle of host publication | Proceedings of the 13th International Conference on Transparent Optical Networks |
Place of Publication | Piscataway, NJ |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 1-5 |
Number of pages | 5 |
ISBN (Electronic) | 9781457708800, 9781457708824 |
ISBN (Print) | 9781457708817 |
DOIs | |
Publication status | Published - 2011 |
Externally published | Yes |
Event | 2011 13th International Conference on Transparent Optical Networks, ICTON 2011 - Stockholm, Sweden Duration: 26 Jun 2011 → 30 Jun 2011 |
Other
Other | 2011 13th International Conference on Transparent Optical Networks, ICTON 2011 |
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Country/Territory | Sweden |
City | Stockholm |
Period | 26/06/11 → 30/06/11 |
Keywords
- Cavity Quantum Electrodynamics
- Molecular Beam Epitaxy
- Photonic Crystal Microcavities
- Quantum Dot