Diffusion length of carriers and excitons in GaN - Influence of epilayer microstructure

M. Godlewski; E. Łusakowska; E. M. Goldys; M. R. Phillips; T. Böttcher; S. Figge; D. Hommel; P. Prystawko; M. Leszczynski; I. Grzegory; S. Porowski

doi:10.1016/j.apsusc.2003.09.012

Diffusion length of carriers and excitons in GaN - Influence of epilayer microstructure

M. Godlewski^*, E. Łusakowska, E. M. Goldys, M. R. Phillips, T. Böttcher, S. Figge, D. Hommel, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

We demonstrate a correlation between the microstructure of epilayers and the diffusion length of free carriers and excitons in heteroepitaxial and homoepitaxial GaN films. We show that the diffusion length is shorter than predicted for a given density of dislocations. With improving structural quality of the films and lower dislocation density the diffusion lengths of free carriers and excitons increase, which, in turn, increases the rate of nonradiative recombination at dislocations. This process may explain a surprisingly small change of light emission efficiency observed for GaN epilayers with varying densities of dislocations.

Original language	English
Pages (from-to)	294-302
Number of pages	9
Journal	Applied Surface Science
Volume	223
Issue number	4
DOIs	https://doi.org/10.1016/j.apsusc.2003.09.012
Publication status	Published - 29 Feb 2004

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title = "Diffusion length of carriers and excitons in GaN - Influence of epilayer microstructure",

abstract = "We demonstrate a correlation between the microstructure of epilayers and the diffusion length of free carriers and excitons in heteroepitaxial and homoepitaxial GaN films. We show that the diffusion length is shorter than predicted for a given density of dislocations. With improving structural quality of the films and lower dislocation density the diffusion lengths of free carriers and excitons increase, which, in turn, increases the rate of nonradiative recombination at dislocations. This process may explain a surprisingly small change of light emission efficiency observed for GaN epilayers with varying densities of dislocations.",

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T1 - Diffusion length of carriers and excitons in GaN - Influence of epilayer microstructure

AU - Godlewski, M.

AU - Łusakowska, E.

AU - Goldys, E. M.

AU - Phillips, M. R.

AU - Böttcher, T.

AU - Figge, S.

AU - Hommel, D.

AU - Prystawko, P.

AU - Leszczynski, M.

AU - Grzegory, I.

AU - Porowski, S.

PY - 2004/2/29

Y1 - 2004/2/29

N2 - We demonstrate a correlation between the microstructure of epilayers and the diffusion length of free carriers and excitons in heteroepitaxial and homoepitaxial GaN films. We show that the diffusion length is shorter than predicted for a given density of dislocations. With improving structural quality of the films and lower dislocation density the diffusion lengths of free carriers and excitons increase, which, in turn, increases the rate of nonradiative recombination at dislocations. This process may explain a surprisingly small change of light emission efficiency observed for GaN epilayers with varying densities of dislocations.

AB - We demonstrate a correlation between the microstructure of epilayers and the diffusion length of free carriers and excitons in heteroepitaxial and homoepitaxial GaN films. We show that the diffusion length is shorter than predicted for a given density of dislocations. With improving structural quality of the films and lower dislocation density the diffusion lengths of free carriers and excitons increase, which, in turn, increases the rate of nonradiative recombination at dislocations. This process may explain a surprisingly small change of light emission efficiency observed for GaN epilayers with varying densities of dislocations.

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U2 - 10.1016/j.apsusc.2003.09.012

DO - 10.1016/j.apsusc.2003.09.012

M3 - Article

AN - SCOPUS:0348170696

SN - 0169-4332

VL - 223

SP - 294

EP - 302

JO - Applied Surface Science

JF - Applied Surface Science

IS - 4

ER -

Diffusion length of carriers and excitons in GaN - Influence of epilayer microstructure

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