Digital to analog resistive switching transition induced by graphene buffer layer in strontium titanate based devices

Tao Wan, Bo Qu, Haiwei Du, Xi Lin, Qianru Lin, Da Wei Wang, Claudio Cazorla*, Sean Li, Sidong Liu, Dewei Chu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)


Resistive switching behaviour can be classified into digital and analog switching based on its abrupt and gradual resistance change characteristics. Realizing the transition from digital to analog switching in the same device is essential for understanding and controlling the performance of the devices with various switching mechanisms. Here, we investigate the resistive switching in a device made with strontium titanate (SrTiO3) nanoparticles using X-ray diffractometry, scanning electron microscopy, Raman spectroscopy, and direct electrical measurements. It is found that the well-known rupture/formation of Ag filaments is responsible for the digital switching in the device with Ag as the top electrode. To modulate the switching performance, we insert a reduced graphene oxide layer between SrTiO 3 and the bottom FTO electrode owing to its good barrier property for the diffusion of Ag ions and high out-of-plane resistance. In this case, resistive switching is changed from digital to analog as determined by the modulation of interfacial resistance under applied voltage. Based on that controllable resistance, potentiation and depression behaviours are implemented as well. This study opens up new ways for the design of multifunctional devices which are promising for memory and neuromorphic computing applications.

Original languageEnglish
Pages (from-to)767-774
Number of pages8
JournalJournal of Colloid and Interface Science
Publication statusPublished - 15 Feb 2018
Externally publishedYes


  • Analog resistive switching
  • Digital resistive switching
  • Reduced graphene oxide
  • SrTiO


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