Diode laser annealing of epitaxy Ge on sapphire (0 0 0 1) grown by magnetron sputtering

Ziheng Liu*, Xiaojing Hao, Jialiang Huang, Anita Ho-Baillie, Sergey Varlamov, Martin A. Green

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In this work, magnetron sputtering was used to epitaxially grow Ge films on sapphire at low temperatures (400 °C–500 °C) and diode laser annealing was employed to improve the crystallinity of the Ge films. The deposition temperature might slightly influence the crystallinity of the Ge film through affecting the diffusion rate of Ge. After laser scans of milliseconds exposure time, significant defect density reduction and removal of polycrystalline portion are achieved. Magnetron sputtering combined with diode laser annealing offers a low-cost and fast method in fabricating high quality single crystalline Ge on sapphire which is potentially capable of large-scale production.

Original languageEnglish
Pages (from-to)35-38
Number of pages4
JournalMaterials Letters
Volume208
DOIs
Publication statusPublished - 1 Dec 2017
Externally publishedYes

Keywords

  • Germanium
  • Epitaxy
  • Sapphire
  • Magnetron sputtering
  • Laser annealing

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