Diode laser annealing on Ge/Si (100) epitaxial films grown by magnetron sputtering

Ziheng Liu*, Xiaojing Hao, Jialiang Huang, Wei Li, Anita Ho-Baillie, Martin A. Green

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


In this work, epitaxial Ge films grown on Si by magnetron sputtering were annealed by diode laser as a replacement for conventional thermal annealing to reduce the threading dislocation density (TDD). After laser scans of millisecond exposure time, improvement of crystallinity and increase in tensile strain are observed in the Ge films. TDD of the Ge film is reduced by two orders of magnitude from 1010 cm−2 to 108 cm−2 after only three laser scans. Diode laser annealing is a fast and low-cost method to effectively reduce TDD in epitaxial Ge films on Si.

Original languageEnglish
Pages (from-to)49-52
Number of pages4
JournalThin Solid Films
Publication statusPublished - 30 Jun 2016
Externally publishedYes


  • Laser annealing
  • Germanium
  • Epitaxy
  • Magnetron sputtering


Dive into the research topics of 'Diode laser annealing on Ge/Si (100) epitaxial films grown by magnetron sputtering'. Together they form a unique fingerprint.

Cite this