Diode laser annealing on Ge/Si (100) epitaxial films grown by magnetron sputtering

Ziheng Liu; Xiaojing Hao; Jialiang Huang; Wei Li; Anita Ho-Baillie; Martin A. Green

doi:10.1016/j.tsf.2016.04.040

Diode laser annealing on Ge/Si (100) epitaxial films grown by magnetron sputtering

Ziheng Liu^*, Xiaojing Hao, Jialiang Huang, Wei Li, Anita Ho-Baillie, Martin A. Green

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

In this work, epitaxial Ge films grown on Si by magnetron sputtering were annealed by diode laser as a replacement for conventional thermal annealing to reduce the threading dislocation density (TDD). After laser scans of millisecond exposure time, improvement of crystallinity and increase in tensile strain are observed in the Ge films. TDD of the Ge film is reduced by two orders of magnitude from 10¹⁰ cm⁻² to 10⁸ cm⁻² after only three laser scans. Diode laser annealing is a fast and low-cost method to effectively reduce TDD in epitaxial Ge films on Si.

Original language	English
Pages (from-to)	49-52
Number of pages	4
Journal	Thin Solid Films
Volume	609
DOIs	https://doi.org/10.1016/j.tsf.2016.04.040
Publication status	Published - 30 Jun 2016
Externally published	Yes

Keywords

Laser annealing
Germanium
Epitaxy
Magnetron sputtering

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10.1016/j.tsf.2016.04.040

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title = "Diode laser annealing on Ge/Si (100) epitaxial films grown by magnetron sputtering",

abstract = "In this work, epitaxial Ge films grown on Si by magnetron sputtering were annealed by diode laser as a replacement for conventional thermal annealing to reduce the threading dislocation density (TDD). After laser scans of millisecond exposure time, improvement of crystallinity and increase in tensile strain are observed in the Ge films. TDD of the Ge film is reduced by two orders of magnitude from 1010 cm−2 to 108 cm−2 after only three laser scans. Diode laser annealing is a fast and low-cost method to effectively reduce TDD in epitaxial Ge films on Si.",

keywords = "Laser annealing, Germanium, Epitaxy, Magnetron sputtering",

author = "Ziheng Liu and Xiaojing Hao and Jialiang Huang and Wei Li and Anita Ho-Baillie and Green, {Martin A.}",

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T1 - Diode laser annealing on Ge/Si (100) epitaxial films grown by magnetron sputtering

AU - Liu, Ziheng

AU - Hao, Xiaojing

AU - Huang, Jialiang

AU - Li, Wei

AU - Ho-Baillie, Anita

AU - Green, Martin A.

PY - 2016/6/30

Y1 - 2016/6/30

N2 - In this work, epitaxial Ge films grown on Si by magnetron sputtering were annealed by diode laser as a replacement for conventional thermal annealing to reduce the threading dislocation density (TDD). After laser scans of millisecond exposure time, improvement of crystallinity and increase in tensile strain are observed in the Ge films. TDD of the Ge film is reduced by two orders of magnitude from 1010 cm−2 to 108 cm−2 after only three laser scans. Diode laser annealing is a fast and low-cost method to effectively reduce TDD in epitaxial Ge films on Si.

AB - In this work, epitaxial Ge films grown on Si by magnetron sputtering were annealed by diode laser as a replacement for conventional thermal annealing to reduce the threading dislocation density (TDD). After laser scans of millisecond exposure time, improvement of crystallinity and increase in tensile strain are observed in the Ge films. TDD of the Ge film is reduced by two orders of magnitude from 1010 cm−2 to 108 cm−2 after only three laser scans. Diode laser annealing is a fast and low-cost method to effectively reduce TDD in epitaxial Ge films on Si.

KW - Laser annealing

KW - Germanium

KW - Epitaxy

KW - Magnetron sputtering

UR - http://www.scopus.com/inward/record.url?scp=84966707626&partnerID=8YFLogxK

UR - http://purl.org/au-research/grants/arc/LP110201112

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DO - 10.1016/j.tsf.2016.04.040

M3 - Article

AN - SCOPUS:84966707626

VL - 609

SP - 49

EP - 52

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -

Diode laser annealing on Ge/Si (100) epitaxial films grown by magnetron sputtering

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Keywords

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