Diplexer-like bias circuits for stabilizing GaAs HBTs during low frequency measurements

Oya Sevimli*, Gerry McCulloch, Rodney Mould, James T. Harvey, Anthony P. Fattorini, Alan C. Young, Anthony E. Parker

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

    4 Citations (Scopus)


    GaAs based heterojunction bipolar transistors are used in microwave oscillators to provide low phase noise operation. Prediction of phase noise requires transistor models to be accurate at low frequencies as well. Measurements of low frequency noise and network parameters however, are not straight forward because of the instabilities of the transistor in the measurement setup. We designed and built diplexer-like bias circuits to stabilize the transistors between DC and 50 GHz for successful low frequency measurements between 10 Hz and 1 MHz.

    Original languageEnglish
    Title of host publicationAsia-Pacific Microwave Conference Proceedings, APMC 2011
    Place of PublicationBarton, A.C.T
    PublisherInstitute of Electrical and Electronics Engineers (IEEE)
    Number of pages4
    ISBN (Print)9780858259744
    Publication statusPublished - 2011
    EventAsia-Pacific Microwave Conference, APMC 2011 - Melbourne, VIC, Australia
    Duration: 5 Dec 20118 Dec 2011

    Publication series

    NameAsia Pacific Microwave Conference-Proceedings


    OtherAsia-Pacific Microwave Conference, APMC 2011
    CityMelbourne, VIC


    Dive into the research topics of 'Diplexer-like bias circuits for stabilizing GaAs HBTs during low frequency measurements'. Together they form a unique fingerprint.

    Cite this