Direct observation of large-scale nonuniformities in hydride vapor-phase epitaxy-grown gallium nitride by cathodoluminescence

E. M. Goldys*, T. Paskova, I. G. Ivanov, B. Arnaudov, B. Monemar

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    32 Citations (Scopus)

    Abstract

    Hydride vapor phase epitaxial GaN films grown on sapphire without a buffer are found to contain large-scale regions with high electron concentration located close to the interface. These regions are composed of individual columns forming an irregular but quasicontinuous layer, while the rest of the film has a much lower carrier concentration. The highly doped regions are easily visualized using cathodoluminescence. The coexistence of regions with low and high electron concentration allows us to explain the concurrent evidence of high film quality in photoluminescence, Raman spectroscopy and x-ray diffraction, and a high electron concentration measured in transport studies.

    Original languageEnglish
    Pages (from-to)3583-3585
    Number of pages3
    JournalApplied Physics Letters
    Volume73
    Issue number24
    DOIs
    Publication statusPublished - 1998

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