Direct tunneling gate current in deep submicron MOSFETs

S. Zaman, A. Haque*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Direct tunneling gate current in MOS structures with ultra-thin gate-oxides in the presence of inelastic scattering in oxide region is studied using a new technique. Numerically calculated results for nMOS devices show that due to inelastic scattering, gate current increases in devices with oxide thickness equal to 2 nm or higher. Inelastic scattering effects are more pronounced at lower gate voltages. However, when the oxide thickness is reduced below 2 nm, inelastic scattering has no significant effect on gate current.

Original languageEnglish
Pages (from-to)742-746
Number of pages5
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4746 I
Publication statusPublished - 2002

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