Dissociation of H-related defect complexes in Mg-doped GaN

O. Gelhausen*, M. R. Phillips, E. M. Goldys, T. Paskova, B. Monemar, M. Strassburg, A. Hoffmann

*Corresponding author for this work

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    59 Citations (Scopus)


    Post-growth annealing and electron beam irradiation during cathodoluminescence were used to determine the chemical origin of the main optical emission lines in moderately and heavily Mg-doped GaN. The 3.27 eV donor-acceptor pair (DAP) emission line that dominates the emission spectrum in moderately Mg-doped (p-type) GaN was found to be strongly reduced by electron irradiation and of different chemical origin than the DAP at a similar energetic position in Si-doped (n-type) GaN. These results suggest that the acceptor responsible for the 3.27 eV DAP emission in Mg-doped GaN is Mg and that the donor (20-30 meV) is hydrogen-related, possibly a (VN-H) complex. This complex is dissociated either by electron irradiation or thermal annealing in N2 or O2 atmosphere. We found that upon electron irradiation, a deeper emission line (centered at 3.14 eV) emerged, which was assigned to a DAP consisting of the same Mg acceptor level and a deeper donor (100-200 meV) with a similar capture cross section as the donor in the 3.27 eV emission. Moreover, two different deep donor levels at 350±30 and 440±40 meV were identified as being responsible for the blue band (2.8-3.0 eV) in heavily Mg-doped GaN. The donor level at 350±30 meV was strongly affected by electron irradiation and attributed to a H-related defect.

    Original languageEnglish
    Article number125210
    Pages (from-to)1252101-1252109
    Number of pages9
    JournalPhysical Review B: Condensed Matter and Materials Physics
    Issue number12
    Publication statusPublished - Mar 2004


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