Dominating behaviour of the donor-acceptor pair emission in mass-transport GaN

T. Paskova*, B. Arnaudov, P. P. Paskov, E. M. Goldys, S. Hautakangas, K. Saarinen, U. Södervall, B. Monemar

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

    Abstract

    A comprehensive study of the donor-acceptor pair (DAP) luminescence band in mass-transport grown GaN in wide ranges of temperature and excitation conditions was performed. Based on spatially resolved micro-photoluminescence, secondary ion mass spectroscopy, Raman scattering and positron annihilation spectroscopy results, as well as on a kinetic analysis of the emission intensities, we propose an acceptor like complex, creating a state as a semiclassical potential well near the valence band bottom due to the tensile strain caused by the empty clusters to be responsible for the dominating behaviour of the DAP emission.

    Original languageEnglish
    Title of host publicationPHYSICS OF SEMICONDUCTORS
    Subtitle of host publication27th International Conference on the Physics of Semiconductors - ICPS-27
    EditorsJosé Menéndez, Chris G. Van de Walle
    Place of PublicationMelville, NY
    PublisherAmerican Institute of Physics
    Pages261-262
    Number of pages2
    Volume772
    EditionIssue 1
    ISBN (Print)0735402574, 9780735402577
    DOIs
    Publication statusPublished - 30 Jun 2005
    EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
    Duration: 26 Jul 200430 Jul 2004

    Other

    OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
    Country/TerritoryUnited States
    CityFlagstaff, AZ
    Period26/07/0430/07/04

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