Dominating behaviour of the donor-acceptor pair emission in mass-transport GaN

T. Paskova*, B. Arnaudov, P. P. Paskov, E. M. Goldys, S. Hautakangas, K. Saarinen, U. Södervall, B. Monemar

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

Abstract

A comprehensive study of the donor-acceptor pair (DAP) luminescence band in mass-transport grown GaN in wide ranges of temperature and excitation conditions was performed. Based on spatially resolved micro-photoluminescence, secondary ion mass spectroscopy, Raman scattering and positron annihilation spectroscopy results, as well as on a kinetic analysis of the emission intensities, we propose an acceptor like complex, creating a state as a semiclassical potential well near the valence band bottom due to the tensile strain caused by the empty clusters to be responsible for the dominating behaviour of the DAP emission.

Original languageEnglish
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors - ICPS-27
EditorsJosé Menéndez, Chris G. Van de Walle
Place of PublicationMelville, NY
PublisherAmerican Institute of Physics
Pages261-262
Number of pages2
Volume772
EditionIssue 1
ISBN (Print)0735402574, 9780735402577
DOIs
Publication statusPublished - 30 Jun 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: 26 Jul 200430 Jul 2004

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period26/07/0430/07/04

Fingerprint Dive into the research topics of 'Dominating behaviour of the donor-acceptor pair emission in mass-transport GaN'. Together they form a unique fingerprint.

Cite this