Abstract
A comprehensive study of the donor-acceptor pair (DAP) luminescence band in mass-transport grown GaN in wide ranges of temperature and excitation conditions was performed. Based on spatially resolved micro-photoluminescence, secondary ion mass spectroscopy, Raman scattering and positron annihilation spectroscopy results, as well as on a kinetic analysis of the emission intensities, we propose an acceptor like complex, creating a state as a semiclassical potential well near the valence band bottom due to the tensile strain caused by the empty clusters to be responsible for the dominating behaviour of the DAP emission.
Original language | English |
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Title of host publication | PHYSICS OF SEMICONDUCTORS |
Subtitle of host publication | 27th International Conference on the Physics of Semiconductors - ICPS-27 |
Editors | José Menéndez, Chris G. Van de Walle |
Place of Publication | Melville, NY |
Publisher | American Institute of Physics |
Pages | 261-262 |
Number of pages | 2 |
Volume | 772 |
Edition | Issue 1 |
ISBN (Print) | 0735402574, 9780735402577 |
DOIs | |
Publication status | Published - 30 Jun 2005 |
Event | PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States Duration: 26 Jul 2004 → 30 Jul 2004 |
Other
Other | PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 |
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Country/Territory | United States |
City | Flagstaff, AZ |
Period | 26/07/04 → 30/07/04 |