Dominating behaviour of the donor-acceptor pair emission in mass-transport GaN

T. Paskova; B. Arnaudov; P. P. Paskov; E. M. Goldys; S. Hautakangas; K. Saarinen; U. Södervall; B. Monemar

doi:10.1063/1.1994092

Dominating behaviour of the donor-acceptor pair emission in mass-transport GaN

T. Paskova^*, B. Arnaudov, P. P. Paskov, E. M. Goldys, S. Hautakangas, K. Saarinen, U. Södervall, B. Monemar

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

A comprehensive study of the donor-acceptor pair (DAP) luminescence band in mass-transport grown GaN in wide ranges of temperature and excitation conditions was performed. Based on spatially resolved micro-photoluminescence, secondary ion mass spectroscopy, Raman scattering and positron annihilation spectroscopy results, as well as on a kinetic analysis of the emission intensities, we propose an acceptor like complex, creating a state as a semiclassical potential well near the valence band bottom due to the tensile strain caused by the empty clusters to be responsible for the dominating behaviour of the DAP emission.

Original language	English
Title of host publication	PHYSICS OF SEMICONDUCTORS
Subtitle of host publication	27th International Conference on the Physics of Semiconductors - ICPS-27
Editors	José Menéndez, Chris G. Van de Walle
Place of Publication	Melville, NY
Publisher	American Institute of Physics
Pages	261-262
Number of pages	2
Volume	772
Edition	Issue 1
ISBN (Print)	0735402574, 9780735402577
DOIs	https://doi.org/10.1063/1.1994092
Publication status	Published - 30 Jun 2005
Event	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States Duration: 26 Jul 2004 → 30 Jul 2004

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Other	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country/Territory	United States
City	Flagstaff, AZ
Period	26/07/04 → 30/07/04

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Paskova, T., Arnaudov, B., Paskov, P. P., Goldys, E. M., Hautakangas, S., Saarinen, K., Södervall, U., & Monemar, B. (2005). Dominating behaviour of the donor-acceptor pair emission in mass-transport GaN. In J. Menéndez, & C. G. Van de Walle (Eds.), PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27 (Issue 1 ed., Vol. 772, pp. 261-262). Article CP772 American Institute of Physics. https://doi.org/10.1063/1.1994092

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title = "Dominating behaviour of the donor-acceptor pair emission in mass-transport GaN",

abstract = "A comprehensive study of the donor-acceptor pair (DAP) luminescence band in mass-transport grown GaN in wide ranges of temperature and excitation conditions was performed. Based on spatially resolved micro-photoluminescence, secondary ion mass spectroscopy, Raman scattering and positron annihilation spectroscopy results, as well as on a kinetic analysis of the emission intensities, we propose an acceptor like complex, creating a state as a semiclassical potential well near the valence band bottom due to the tensile strain caused by the empty clusters to be responsible for the dominating behaviour of the DAP emission.",

author = "T. Paskova and B. Arnaudov and Paskov, \{P. P.\} and Goldys, \{E. M.\} and S. Hautakangas and K. Saarinen and U. S{\"o}dervall and B. Monemar",

year = "2005",

month = jun,

day = "30",

doi = "10.1063/1.1994092",

language = "English",

isbn = "0735402574",

volume = "772",

pages = "261--262",

editor = "Jos{\'e} Men{\'e}ndez and \{Van de Walle\}, \{Chris G.\}",

booktitle = "PHYSICS OF SEMICONDUCTORS",

publisher = "American Institute of Physics",

address = "United States",

edition = "Issue 1",

note = "PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 ; Conference date: 26-07-2004 Through 30-07-2004",

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Paskova, T, Arnaudov, B, Paskov, PP, Goldys, EM, Hautakangas, S, Saarinen, K, Södervall, U & Monemar, B 2005, Dominating behaviour of the donor-acceptor pair emission in mass-transport GaN. in J Menéndez & CG Van de Walle (eds), PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. Issue 1 edn, vol. 772, CP772, American Institute of Physics, Melville, NY, pp. 261-262, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 26/07/04. https://doi.org/10.1063/1.1994092

Dominating behaviour of the donor-acceptor pair emission in mass-transport GaN. / Paskova, T.; Arnaudov, B.; Paskov, P. P. et al.
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. ed. / José Menéndez; Chris G. Van de Walle. Vol. 772 Issue 1. ed. Melville, NY: American Institute of Physics, 2005. p. 261-262 CP772.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Dominating behaviour of the donor-acceptor pair emission in mass-transport GaN

AU - Paskova, T.

AU - Arnaudov, B.

AU - Paskov, P. P.

AU - Goldys, E. M.

AU - Hautakangas, S.

AU - Saarinen, K.

AU - Södervall, U.

AU - Monemar, B.

PY - 2005/6/30

Y1 - 2005/6/30

N2 - A comprehensive study of the donor-acceptor pair (DAP) luminescence band in mass-transport grown GaN in wide ranges of temperature and excitation conditions was performed. Based on spatially resolved micro-photoluminescence, secondary ion mass spectroscopy, Raman scattering and positron annihilation spectroscopy results, as well as on a kinetic analysis of the emission intensities, we propose an acceptor like complex, creating a state as a semiclassical potential well near the valence band bottom due to the tensile strain caused by the empty clusters to be responsible for the dominating behaviour of the DAP emission.

AB - A comprehensive study of the donor-acceptor pair (DAP) luminescence band in mass-transport grown GaN in wide ranges of temperature and excitation conditions was performed. Based on spatially resolved micro-photoluminescence, secondary ion mass spectroscopy, Raman scattering and positron annihilation spectroscopy results, as well as on a kinetic analysis of the emission intensities, we propose an acceptor like complex, creating a state as a semiclassical potential well near the valence band bottom due to the tensile strain caused by the empty clusters to be responsible for the dominating behaviour of the DAP emission.

UR - https://www.scopus.com/pages/publications/33749473286

U2 - 10.1063/1.1994092

DO - 10.1063/1.1994092

M3 - Conference proceeding contribution

AN - SCOPUS:33749473286

SN - 0735402574

SN - 9780735402577

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EP - 262

BT - PHYSICS OF SEMICONDUCTORS

A2 - Menéndez, José

A2 - Van de Walle, Chris G.

PB - American Institute of Physics

CY - Melville, NY

T2 - PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27

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ER -

Paskova T, Arnaudov B, Paskov PP, Goldys EM, Hautakangas S, Saarinen K et al. Dominating behaviour of the donor-acceptor pair emission in mass-transport GaN. In Menéndez J, Van de Walle CG, editors, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. Issue 1 ed. Vol. 772. Melville, NY: American Institute of Physics. 2005. p. 261-262. CP772 doi: 10.1063/1.1994092

Dominating behaviour of the donor-acceptor pair emission in mass-transport GaN

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