Doping effect on dark currents in In0.5Ga0.5As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition

K. Drozdowicz-Tomsia; E. M. Goldys; Lan Fu; C. Jagadish

doi:10.1063/1.2354432

Doping effect on dark currents in In_0.5Ga_0.5As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition

K. Drozdowicz-Tomsia^*, E. M. Goldys, Lan Fu, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

Stacked self-assembled In_0.5Ga_0.5As/GaAs quantum dot infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition, with and without silicon dopants in the quantum dot layers, are investigated. The increase of dark currents observed at higher doping levels is attributed to higher defect density leading to stronger sequential resonant tunneling and to lowering of the operating temperature of the device.

Original language	English
Article number	113510
Pages (from-to)	113510-1-113510-3
Number of pages	3
Journal	Applied Physics Letters
Volume	89
Issue number	11
DOIs	https://doi.org/10.1063/1.2354432
Publication status	Published - 2006

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abstract = "Stacked self-assembled In0.5Ga0.5As/GaAs quantum dot infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition, with and without silicon dopants in the quantum dot layers, are investigated. The increase of dark currents observed at higher doping levels is attributed to higher defect density leading to stronger sequential resonant tunneling and to lowering of the operating temperature of the device.",

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AU - Fu, Lan

AU - Jagadish, C.

PY - 2006

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AB - Stacked self-assembled In0.5Ga0.5As/GaAs quantum dot infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition, with and without silicon dopants in the quantum dot layers, are investigated. The increase of dark currents observed at higher doping levels is attributed to higher defect density leading to stronger sequential resonant tunneling and to lowering of the operating temperature of the device.

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Doping effect on dark currents in In_0.5Ga_0.5As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition

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