Doping effect on dark currents in In0.5Ga0.5As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition

K. Drozdowicz-Tomsia*, E. M. Goldys, Lan Fu, C. Jagadish

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    32 Citations (Scopus)

    Abstract

    Stacked self-assembled In0.5Ga0.5As/GaAs quantum dot infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition, with and without silicon dopants in the quantum dot layers, are investigated. The increase of dark currents observed at higher doping levels is attributed to higher defect density leading to stronger sequential resonant tunneling and to lowering of the operating temperature of the device.

    Original languageEnglish
    Article number113510
    Pages (from-to)113510-1-113510-3
    Number of pages3
    JournalApplied Physics Letters
    Volume89
    Issue number11
    DOIs
    Publication statusPublished - 2006

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