Doping effect on dark currents in In0.5Ga0.5As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition

K. Drozdowicz-Tomsia*, E. M. Goldys, Lan Fu, C. Jagadish

*Corresponding author for this work

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

Stacked self-assembled In0.5Ga0.5As/GaAs quantum dot infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition, with and without silicon dopants in the quantum dot layers, are investigated. The increase of dark currents observed at higher doping levels is attributed to higher defect density leading to stronger sequential resonant tunneling and to lowering of the operating temperature of the device.

Original languageEnglish
Article number113510
Pages (from-to)113510-1-113510-3
Number of pages3
JournalApplied Physics Letters
Volume89
Issue number11
DOIs
Publication statusPublished - 2006

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