Doping-level-dependent optical properties of GaN:Mn

O. Gelhausen*, E. Malguth, M. R. Phillips, E. M. Goldys, M. Strassburg, A. Hoffmann, T. Graf, M. Gjukic, M. Stutzmann

*Corresponding author for this work

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

Cathodoluminescence (CL) and optical transmission spectroscopy were used to study the optical properties of molecular-beam-epitaxy (MBE) grown GaN with different doping levels. The 1-μm-thick samples were grown by plasma-induced MBE on c-plane Al 2O 3 substrate. The absorption measurements were performed at 2 K with a 250 W tungsten-halogen lamp. The CL measurements showed that Mn-doping concentrations around 10 20 cm -3 reduced the near band edge emission intensity by around one order of magnitude.

Original languageEnglish
Pages (from-to)4514-4516
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number22
DOIs
Publication statusPublished - 31 May 2004

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