Doping-level-dependent optical properties of GaN:Mn

O. Gelhausen; E. Malguth; M. R. Phillips; E. M. Goldys; M. Strassburg; A. Hoffmann; T. Graf; M. Gjukic; M. Stutzmann

doi:10.1063/1.1757641

Doping-level-dependent optical properties of GaN:Mn

O. Gelhausen^*, E. Malguth, M. R. Phillips, E. M. Goldys, M. Strassburg, A. Hoffmann, T. Graf, M. Gjukic, M. Stutzmann

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

Cathodoluminescence (CL) and optical transmission spectroscopy were used to study the optical properties of molecular-beam-epitaxy (MBE) grown GaN with different doping levels. The 1-μm-thick samples were grown by plasma-induced MBE on c-plane Al ₂O ₃ substrate. The absorption measurements were performed at 2 K with a 250 W tungsten-halogen lamp. The CL measurements showed that Mn-doping concentrations around 10 ²⁰ cm ^-3 reduced the near band edge emission intensity by around one order of magnitude.

Original language	English
Pages (from-to)	4514-4516
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	22
DOIs	https://doi.org/10.1063/1.1757641
Publication status	Published - 31 May 2004

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@article{1e16efb13520472187b96c67ded0e43b,

title = "Doping-level-dependent optical properties of GaN:Mn",

abstract = "Cathodoluminescence (CL) and optical transmission spectroscopy were used to study the optical properties of molecular-beam-epitaxy (MBE) grown GaN with different doping levels. The 1-μm-thick samples were grown by plasma-induced MBE on c-plane Al 2O 3 substrate. The absorption measurements were performed at 2 K with a 250 W tungsten-halogen lamp. The CL measurements showed that Mn-doping concentrations around 10 20 cm -3 reduced the near band edge emission intensity by around one order of magnitude.",

author = "O. Gelhausen and E. Malguth and Phillips, \{M. R.\} and Goldys, \{E. M.\} and M. Strassburg and A. Hoffmann and T. Graf and M. Gjukic and M. Stutzmann",

year = "2004",

month = may,

day = "31",

doi = "10.1063/1.1757641",

language = "English",

volume = "84",

pages = "4514--4516",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "22",

}

TY - JOUR

T1 - Doping-level-dependent optical properties of GaN:Mn

AU - Gelhausen, O.

AU - Malguth, E.

AU - Phillips, M. R.

AU - Goldys, E. M.

AU - Strassburg, M.

AU - Hoffmann, A.

AU - Graf, T.

AU - Gjukic, M.

AU - Stutzmann, M.

PY - 2004/5/31

Y1 - 2004/5/31

N2 - Cathodoluminescence (CL) and optical transmission spectroscopy were used to study the optical properties of molecular-beam-epitaxy (MBE) grown GaN with different doping levels. The 1-μm-thick samples were grown by plasma-induced MBE on c-plane Al 2O 3 substrate. The absorption measurements were performed at 2 K with a 250 W tungsten-halogen lamp. The CL measurements showed that Mn-doping concentrations around 10 20 cm -3 reduced the near band edge emission intensity by around one order of magnitude.

AB - Cathodoluminescence (CL) and optical transmission spectroscopy were used to study the optical properties of molecular-beam-epitaxy (MBE) grown GaN with different doping levels. The 1-μm-thick samples were grown by plasma-induced MBE on c-plane Al 2O 3 substrate. The absorption measurements were performed at 2 K with a 250 W tungsten-halogen lamp. The CL measurements showed that Mn-doping concentrations around 10 20 cm -3 reduced the near band edge emission intensity by around one order of magnitude.

UR - https://www.scopus.com/pages/publications/3042824548

U2 - 10.1063/1.1757641

DO - 10.1063/1.1757641

M3 - Article

AN - SCOPUS:3042824548

SN - 0003-6951

VL - 84

SP - 4514

EP - 4516

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Doping-level-dependent optical properties of GaN:Mn

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