Abstract
Boron (B)- and antimony (Sb)-doped Si quantum dots (QDs) in Si3N4 films were fabricated using the co-sputtering method with a post-deposition anneal. The effect of B and Sb on Si QDs films was investigated in terms of structural, optical and electrical properties. It is found that a low dopant concentration induced negligible structural changes in the Si QD films. The PL intensity decreases with increasing B or Sb content. This could result from the non-radiative recombination processes attributed to defects associated with the dopants and Auger processes due to successful doping of Si QDs. For the B-doped sample the conductivity increases about 100 times, which could be attributed to an increase in carrier concentration. For the Sb-doped sample, a significant increase (six orders of magnitude) in conductivity suggests an effective Sb doping. The charge transport mechanism in the Sb-doped Si QD films matches well with the percolation-hopping model in low temperature region. Both B- and Sb-doped samples show thermally activated hopping conduction characteristics in the range of 220-320 K.
Original language | English |
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Article number | 10NE10 |
Pages (from-to) | 1-6 |
Number of pages | 6 |
Journal | Japanese Journal of Applied Physics |
Volume | 51 |
Issue number | 10S |
DOIs | |
Publication status | Published - Oct 2012 |
Externally published | Yes |
Event | International Photovoltaic Science and Engineering Conference (21st : 2011) - Fukuoka, Japan Duration: 28 Nov 2011 → 2 Dec 2011 Conference number: 21st |