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Double-polysilicon self-aligned lateral bipolar transistors
P. Pengpad
*
,
D. M. Bagnall
*
Corresponding author for this work
Research output
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peer-review
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Engineering & Materials Science
Bipolar transistors
100%
Capacitance
69%
Cutoff frequency
31%
Emitter coupled logic circuits
37%
Lithography
29%
Oxides
46%
Polysilicon
93%
Silicon
63%
Substrates
57%
Time delay
22%
Transistors
23%
Physics & Astronomy
accumulators
80%
augmentation
12%
bipolar transistors
87%
capacitance
48%
cut-off
16%
electric contacts
17%
emitters
16%
isolation
19%
junction transistors
27%
lithography
16%
oscillations
12%
oxides
25%
performance
8%
propagation
11%
silicon
21%
silicon transistors
28%
simulation
7%
time lag
17%
transistors
16%
wafers
15%
Chemistry
Dimension
30%
Parasitic
50%
Reduction
18%
Resistance
51%
Simulation
25%
Time
14%