Downscaled graphene nanodevices: fabrication and ab initio study

Hiroshi Mizuta; Zakaria Moktadir; Stuart A. Boden; Nima Kalhor; Shuojin Hang; Marek E. Schmidt; Nguyen Tien Cuong; Dam Hieu Chi; Nobuo Otsuka; Muruagnathan Manoharan; Yoshishige Tsuchiya; Harold Chong; Harvey N. Rutt; Darren M. Bagnall

doi:10.1109/ICSICT.2012.6467940

Downscaled graphene nanodevices: fabrication and ab initio study

Hiroshi Mizuta^*, Zakaria Moktadir, Stuart A. Boden, Nima Kalhor, Shuojin Hang, Marek E. Schmidt, Nguyen Tien Cuong, Dam Hieu Chi, Nobuo Otsuka, Muruagnathan Manoharan, Yoshishige Tsuchiya, Harold Chong, Harvey N. Rutt, Darren M. Bagnall

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

In this paper we first present a new fabrication process of downscaled graphene nanodevices based on direct milling of graphene using an atomic-size He⁺ ion beam. We then study the effects of the He⁺ ion exposure on the carrier transport properties in a bilayer graphene nanoribbon (GNR) by varying the time of He ion bombardment, along with underlying carrier scattering mechanisms. Finally we study the effects of various point defects in extremely-scaled GNRs on the carrier transport properties using ab initio simulation.

Original language	English
Title of host publication	2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology
Subtitle of host publication	proceedings
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Number of pages	4
ISBN (Electronic)	9781467324755
ISBN (Print)	9781467324728
DOIs	https://doi.org/10.1109/ICSICT.2012.6467940
Publication status	Published - 2012
Externally published	Yes
Event	2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 - Xi'an, China Duration: 29 Oct 2012 → 1 Nov 2012

Conference

Conference	2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012
Country/Territory	China
City	Xi'an
Period	29/10/12 → 1/11/12

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10.1109/ICSICT.2012.6467940

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Mizuta, H., Moktadir, Z., Boden, S. A., Kalhor, N., Hang, S., Schmidt, M. E., Cuong, N. T., Chi, D. H., Otsuka, N., Manoharan, M., Tsuchiya, Y., Chong, H., Rutt, H. N., & Bagnall, D. M. (2012). Downscaled graphene nanodevices: fabrication and ab initio study. In 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology: proceedings [6467940] Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ICSICT.2012.6467940

@inproceedings{ce6aabeeb0b64ec2a0c28ae9742dc0f4,

title = "Downscaled graphene nanodevices: fabrication and ab initio study",

abstract = "In this paper we first present a new fabrication process of downscaled graphene nanodevices based on direct milling of graphene using an atomic-size He+ ion beam. We then study the effects of the He+ ion exposure on the carrier transport properties in a bilayer graphene nanoribbon (GNR) by varying the time of He ion bombardment, along with underlying carrier scattering mechanisms. Finally we study the effects of various point defects in extremely-scaled GNRs on the carrier transport properties using ab initio simulation.",

author = "Hiroshi Mizuta and Zakaria Moktadir and Boden, {Stuart A.} and Nima Kalhor and Shuojin Hang and Schmidt, {Marek E.} and Cuong, {Nguyen Tien} and Chi, {Dam Hieu} and Nobuo Otsuka and Muruagnathan Manoharan and Yoshishige Tsuchiya and Harold Chong and Rutt, {Harvey N.} and Bagnall, {Darren M.}",

year = "2012",

doi = "10.1109/ICSICT.2012.6467940",

language = "English",

isbn = "9781467324728",

booktitle = "2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 ; Conference date: 29-10-2012 Through 01-11-2012",

}

Mizuta, H, Moktadir, Z, Boden, SA, Kalhor, N, Hang, S, Schmidt, ME, Cuong, NT, Chi, DH, Otsuka, N, Manoharan, M, Tsuchiya, Y, Chong, H, Rutt, HN & Bagnall, DM 2012, Downscaled graphene nanodevices: fabrication and ab initio study. in 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology: proceedings., 6467940, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012, Xi'an, China, 29/10/12. https://doi.org/10.1109/ICSICT.2012.6467940

Downscaled graphene nanodevices: fabrication and ab initio study. / Mizuta, Hiroshi; Moktadir, Zakaria; Boden, Stuart A. et al.
2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology: proceedings. Piscataway: Institute of Electrical and Electronics Engineers (IEEE), 2012. 6467940.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Downscaled graphene nanodevices

T2 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012

AU - Mizuta, Hiroshi

AU - Moktadir, Zakaria

AU - Boden, Stuart A.

AU - Kalhor, Nima

AU - Hang, Shuojin

AU - Schmidt, Marek E.

AU - Cuong, Nguyen Tien

AU - Chi, Dam Hieu

AU - Otsuka, Nobuo

AU - Manoharan, Muruagnathan

AU - Tsuchiya, Yoshishige

AU - Chong, Harold

AU - Rutt, Harvey N.

AU - Bagnall, Darren M.

PY - 2012

Y1 - 2012

N2 - In this paper we first present a new fabrication process of downscaled graphene nanodevices based on direct milling of graphene using an atomic-size He+ ion beam. We then study the effects of the He+ ion exposure on the carrier transport properties in a bilayer graphene nanoribbon (GNR) by varying the time of He ion bombardment, along with underlying carrier scattering mechanisms. Finally we study the effects of various point defects in extremely-scaled GNRs on the carrier transport properties using ab initio simulation.

AB - In this paper we first present a new fabrication process of downscaled graphene nanodevices based on direct milling of graphene using an atomic-size He+ ion beam. We then study the effects of the He+ ion exposure on the carrier transport properties in a bilayer graphene nanoribbon (GNR) by varying the time of He ion bombardment, along with underlying carrier scattering mechanisms. Finally we study the effects of various point defects in extremely-scaled GNRs on the carrier transport properties using ab initio simulation.

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U2 - 10.1109/ICSICT.2012.6467940

DO - 10.1109/ICSICT.2012.6467940

M3 - Conference proceeding contribution

AN - SCOPUS:84874822697

SN - 9781467324728

BT - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway

Y2 - 29 October 2012 through 1 November 2012

ER -

Downscaled graphene nanodevices: fabrication and ab initio study

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