Downscaled graphene nanodevices

fabrication and ab initio study

Hiroshi Mizuta*, Zakaria Moktadir, Stuart A. Boden, Nima Kalhor, Shuojin Hang, Marek E. Schmidt, Nguyen Tien Cuong, Dam Hieu Chi, Nobuo Otsuka, Muruagnathan Manoharan, Yoshishige Tsuchiya, Harold Chong, Harvey N. Rutt, Darren M. Bagnall

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

In this paper we first present a new fabrication process of downscaled graphene nanodevices based on direct milling of graphene using an atomic-size He+ ion beam. We then study the effects of the He+ ion exposure on the carrier transport properties in a bilayer graphene nanoribbon (GNR) by varying the time of He ion bombardment, along with underlying carrier scattering mechanisms. Finally we study the effects of various point defects in extremely-scaled GNRs on the carrier transport properties using ab initio simulation.

Original languageEnglish
Title of host publication2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology
Subtitle of host publicationproceedings
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages4
ISBN (Electronic)9781467324755
ISBN (Print)9781467324728
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 - Xi'an, China
Duration: 29 Oct 20121 Nov 2012

Conference

Conference2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012
CountryChina
CityXi'an
Period29/10/121/11/12

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