Dual region write buffering

making large-scale nonvolatile buffer using small capacitor in SSD

Dongwook Kim, Sooyong Kang

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

5 Citations (Scopus)

Abstract

Write buffering not only enables Solid State Drive (SSD) to immediately respond to the write request but also increases the lifespan of the SSD by reducing the amount of data written to the flash memory. However, since the DRAM which is used as a write buffer is volatile, it has a few critical problems such as buffered data loss upon sudden power-off and limited write reduction effect due to the flush commands and synchronous writes from the file system. These problems can be addressed when non-volatile memory (NVRAM) is used, instead of DRAM, as a write buffer. In this paper, we propose a novel Dual-Region Write Buffering (DRWB) scheme that implements logically non-volatile write buffer using large sized DRAM and small capacity capacitor. The DRWB exploits the differential write scheme, which has been developed originally for the write reduction in SSD, to protect data in the write buffer. Experimental results show that the proposed scheme enables us to achieve the same effect with the NVRAM write buffer, in terms of the data reliability, without noticeable performance degradation.

Original languageEnglish
Title of host publicationProceedings of the 30th Annual ACM Symposium on Applied Computing
Place of PublicationNew York, NY
PublisherAssociation for Computing Machinery (ACM)
Pages2039-2046
Number of pages8
ISBN (Electronic)9781450331968
DOIs
Publication statusPublished - 13 Apr 2015
Externally publishedYes
Event30th Annual ACM Symposium on Applied Computing, SAC - 2015 - Salamanca, Spain
Duration: 13 Apr 201517 Apr 2015

Other

Other30th Annual ACM Symposium on Applied Computing, SAC - 2015
CountrySpain
CitySalamanca
Period13/04/1517/04/15

Keywords

  • Differential write
  • Reliability
  • Solid State Drives
  • Write buffer

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