Dynamics of microwave FET behaviour

Anthony Parker, James Rathmell

    Research output: Chapter in Book/Report/Conference proceedingChapter


    The article discusses dispersion in the dynamic characteristics of microwave HEMTs, and the application of a pulsed-bias measurement system. Thermal effects and non-thermal effects are analysed
    Original languageEnglish
    Title of host publicationTutorial guide
    Subtitle of host publicationISCAS 2001 : the IEEE International Symposium on Circuits and Systems : 6-9 May, 2001, Sydney, Australia
    Place of PublicationPiscataway, New Jersey
    PublisherInstitute of Electrical and Electronics Engineers (IEEE)
    Number of pages10
    ISBN (Print)0780371135
    Publication statusPublished - 2001


    • high electron mobility transistors
    • microwave field effect transistors
    • microwave measurement
    • semiconductor device measurement


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