Dynamics of microwave FET behaviour

Anthony Parker, James Rathmell

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

The article discusses dispersion in the dynamic characteristics of microwave HEMTs, and the application of a pulsed-bias measurement system. Thermal effects and non-thermal effects are analysed
Original languageEnglish
Title of host publicationTutorial guide
Subtitle of host publicationISCAS 2001 : the IEEE International Symposium on Circuits and Systems : 6-9 May, 2001, Sydney, Australia
Place of PublicationPiscataway, New Jersey
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages2.6.1-2.6.10
Number of pages10
ISBN (Print)0780371135
DOIs
Publication statusPublished - 2001

Keywords

  • high electron mobility transistors
  • microwave field effect transistors
  • microwave measurement
  • semiconductor device measurement

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