Dynamics of microwave FET behaviour

Anthony Parker; James Rathmell

doi:10.1109/TUTCAS.2001.946944

Dynamics of microwave FET behaviour

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

The article discusses dispersion in the dynamic characteristics of microwave HEMTs, and the application of a pulsed-bias measurement system. Thermal effects and non-thermal effects are analysed

Original language	English
Title of host publication	Tutorial guide
Subtitle of host publication	ISCAS 2001 : the IEEE International Symposium on Circuits and Systems : 6-9 May, 2001, Sydney, Australia
Place of Publication	Piscataway, New Jersey
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	2.6.1-2.6.10
Number of pages	10
ISBN (Print)	0780371135
DOIs	https://doi.org/10.1109/TUTCAS.2001.946944
Publication status	Published - 2001

Keywords

high electron mobility transistors
microwave field effect transistors
microwave measurement
semiconductor device measurement

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10.1109/TUTCAS.2001.946944

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title = "Dynamics of microwave FET behaviour",

abstract = "The article discusses dispersion in the dynamic characteristics of microwave HEMTs, and the application of a pulsed-bias measurement system. Thermal effects and non-thermal effects are analysed",

keywords = "high electron mobility transistors, microwave field effect transistors, microwave measurement, semiconductor device measurement",

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language = "English",

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Dynamics of microwave FET behaviour. / Parker, Anthony; Rathmell, James.
Tutorial guide: ISCAS 2001 : the IEEE International Symposium on Circuits and Systems : 6-9 May, 2001, Sydney, Australia. Piscataway, New Jersey: Institute of Electrical and Electronics Engineers (IEEE), 2001. p. 2.6.1-2.6.10.

Research output: Chapter in Book/Report/Conference proceeding › Chapter

TY - CHAP

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AU - Parker, Anthony

AU - Rathmell, James

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AB - The article discusses dispersion in the dynamic characteristics of microwave HEMTs, and the application of a pulsed-bias measurement system. Thermal effects and non-thermal effects are analysed

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KW - microwave field effect transistors

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KW - semiconductor device measurement

U2 - 10.1109/TUTCAS.2001.946944

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BT - Tutorial guide

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, New Jersey

ER -

Dynamics of microwave FET behaviour

Abstract

Keywords

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