E-band amplifier in commercial 0.12 μm GaN at beyond twice fT

Melissa C. Gorman; Mohamed N. Ahmed; Andrew J. Jones; Simon J. Mahon

doi:10.1109/AMS63679.2025.10937869

E-band amplifier in commercial 0.12 μm GaN at beyond twice f_T

Melissa C. Gorman^*, Mohamed N. Ahmed, Andrew J. Jones, Simon J. Mahon

^*Corresponding author for this work

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

A three-stage E-band amplifier has been designed in a commercial GaN process with an fT of only 35 GHz, less than half the amplifier's target frequency band of 81-86 GHz. Two FET topologies were investigated: standard outside via (OSV) and a butterfly (BF) layout with double backvias. Measured gain exceeded 12 dB for both topologies and output power exceeded 18 dBm at 2 dB compression.

Original language	English
Title of host publication	2025 6th Australian Microwave Symposium (AMS)
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	77-78
Number of pages	2
ISBN (Electronic)	9798350379969
ISBN (Print)	9798350379976
DOIs	https://doi.org/10.1109/AMS63679.2025.10937869
Publication status	Published - 2025
Event	6th Australian Microwave Symposium, AMS 2025 - Gold Coast, Australia Duration: 10 Feb 2025 → 11 Feb 2025

Conference

Conference	6th Australian Microwave Symposium, AMS 2025
Country/Territory	Australia
City	Gold Coast
Period	10/02/25 → 11/02/25

Keywords

E band
GaN
amplifier
MMIC
semiconductor

Access to Document

10.1109/AMS63679.2025.10937869

Cite this

@inproceedings{67de3b85cdea447191355e1e820babfc,

title = "E-band amplifier in commercial 0.12 μm GaN at beyond twice fT",

abstract = "A three-stage E-band amplifier has been designed in a commercial GaN process with an fT of only 35 GHz, less than half the amplifier's target frequency band of 81-86 GHz. Two FET topologies were investigated: standard outside via (OSV) and a butterfly (BF) layout with double backvias. Measured gain exceeded 12 dB for both topologies and output power exceeded 18 dBm at 2 dB compression.",

keywords = "E band, GaN, amplifier, MMIC, semiconductor",

author = "Gorman, {Melissa C.} and Ahmed, {Mohamed N.} and Jones, {Andrew J.} and Mahon, {Simon J.}",

year = "2025",

doi = "10.1109/AMS63679.2025.10937869",

language = "English",

isbn = "9798350379976",

pages = "77--78",

booktitle = "2025 6th Australian Microwave Symposium (AMS)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "6th Australian Microwave Symposium, AMS 2025 ; Conference date: 10-02-2025 Through 11-02-2025",

}

Gorman, MC, Ahmed, MN, Jones, AJ & Mahon, SJ 2025, E-band amplifier in commercial 0.12 μm GaN at beyond twice f_T. in 2025 6th Australian Microwave Symposium (AMS). Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 77-78, 6th Australian Microwave Symposium, AMS 2025, Gold Coast, Australia, 10/02/25. https://doi.org/10.1109/AMS63679.2025.10937869

E-band amplifier in commercial 0.12 μm GaN at beyond twice f_T. / Gorman, Melissa C.; Ahmed, Mohamed N.; Jones, Andrew J. et al.
2025 6th Australian Microwave Symposium (AMS). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2025. p. 77-78.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - E-band amplifier in commercial 0.12 μm GaN at beyond twice fT

AU - Gorman, Melissa C.

AU - Ahmed, Mohamed N.

AU - Jones, Andrew J.

AU - Mahon, Simon J.

PY - 2025

Y1 - 2025

N2 - A three-stage E-band amplifier has been designed in a commercial GaN process with an fT of only 35 GHz, less than half the amplifier's target frequency band of 81-86 GHz. Two FET topologies were investigated: standard outside via (OSV) and a butterfly (BF) layout with double backvias. Measured gain exceeded 12 dB for both topologies and output power exceeded 18 dBm at 2 dB compression.

AB - A three-stage E-band amplifier has been designed in a commercial GaN process with an fT of only 35 GHz, less than half the amplifier's target frequency band of 81-86 GHz. Two FET topologies were investigated: standard outside via (OSV) and a butterfly (BF) layout with double backvias. Measured gain exceeded 12 dB for both topologies and output power exceeded 18 dBm at 2 dB compression.

KW - E band

KW - GaN

KW - amplifier

KW - MMIC

KW - semiconductor

UR - http://www.scopus.com/inward/record.url?scp=105002716509&partnerID=8YFLogxK

U2 - 10.1109/AMS63679.2025.10937869

DO - 10.1109/AMS63679.2025.10937869

M3 - Conference proceeding contribution

AN - SCOPUS:105002716509

SN - 9798350379976

SP - 77

EP - 78

BT - 2025 6th Australian Microwave Symposium (AMS)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 6th Australian Microwave Symposium, AMS 2025

Y2 - 10 February 2025 through 11 February 2025

ER -