Effect of access region and field plate on capacitance behavior of GaN HEMT

Khushboo Sharma, Avirup Dasgupta, Sudip Ghosh, Sheikh Aamir Ahsan, Sourabh Khandelwal, Yogesh Singh Chauhan

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

9 Citations (Scopus)

Abstract

Incorporation of Field Plate in High Electron Mobility Transistors (HEMTs) improves the device breakdown voltage but on the other hand, increases the device Capacitance. It has a direct impact on the device switching characteristics and hence the study of the capacitive behavior holds supreme importance for GaN HEMTs power switching application. Also, in GaN HEMTs, lower values of access region resistance improves the device output current but at the cost of increase in its capacitance, CGD. In this paper, using TCAD simulations on a field plated GaN HEMT, we present the physical explanation for the variation in C-V characteristics for different access region and field plate lengths.

Original languageEnglish
Title of host publicationEDSSC 2015
Subtitle of host publicationProceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits
Place of PublicationSingapore
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages499-502
Number of pages4
ISBN (Electronic)9781479983636
DOIs
Publication statusPublished - 30 Sep 2015
Externally publishedYes
Event11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015 - Singapore, Singapore
Duration: 1 Jun 20154 Jun 2015

Other

Other11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015
CountrySingapore
CitySingapore
Period1/06/154/06/15

Keywords

  • Access Region
  • Capacitance
  • Field Plate
  • GaN HEMTs

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