Effect of access region and field plate on capacitance behavior of GaN HEMT

Khushboo Sharma; Avirup Dasgupta; Sudip Ghosh; Sheikh Aamir Ahsan; Sourabh Khandelwal; Yogesh Singh Chauhan

doi:10.1109/EDSSC.2015.7285160

Effect of access region and field plate on capacitance behavior of GaN HEMT

Khushboo Sharma, Avirup Dasgupta, Sudip Ghosh, Sheikh Aamir Ahsan, Sourabh Khandelwal, Yogesh Singh Chauhan

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

16 Citations (Scopus)

Abstract

Incorporation of Field Plate in High Electron Mobility Transistors (HEMTs) improves the device breakdown voltage but on the other hand, increases the device Capacitance. It has a direct impact on the device switching characteristics and hence the study of the capacitive behavior holds supreme importance for GaN HEMTs power switching application. Also, in GaN HEMTs, lower values of access region resistance improves the device output current but at the cost of increase in its capacitance, C_GD. In this paper, using TCAD simulations on a field plated GaN HEMT, we present the physical explanation for the variation in C-V characteristics for different access region and field plate lengths.

Original language	English
Title of host publication	EDSSC 2015
Subtitle of host publication	Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits
Place of Publication	Singapore
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	499-502
Number of pages	4
ISBN (Electronic)	9781479983636
DOIs	https://doi.org/10.1109/EDSSC.2015.7285160
Publication status	Published - 30 Sept 2015
Externally published	Yes
Event	11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015 - Singapore, Singapore Duration: 1 Jun 2015 → 4 Jun 2015

Other

Other	11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015
Country/Territory	Singapore
City	Singapore
Period	1/06/15 → 4/06/15

Keywords

Access Region
Capacitance
Field Plate
GaN HEMTs

Access to Document

10.1109/EDSSC.2015.7285160

Cite this

Sharma, K., Dasgupta, A., Ghosh, S., Ahsan, S. A., Khandelwal, S., & Chauhan, Y. S. (2015). Effect of access region and field plate on capacitance behavior of GaN HEMT. In EDSSC 2015: Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (pp. 499-502). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/EDSSC.2015.7285160

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title = "Effect of access region and field plate on capacitance behavior of GaN HEMT",

abstract = "Incorporation of Field Plate in High Electron Mobility Transistors (HEMTs) improves the device breakdown voltage but on the other hand, increases the device Capacitance. It has a direct impact on the device switching characteristics and hence the study of the capacitive behavior holds supreme importance for GaN HEMTs power switching application. Also, in GaN HEMTs, lower values of access region resistance improves the device output current but at the cost of increase in its capacitance, CGD. In this paper, using TCAD simulations on a field plated GaN HEMT, we present the physical explanation for the variation in C-V characteristics for different access region and field plate lengths.",

keywords = "Access Region, Capacitance, Field Plate, GaN HEMTs",

author = "Khushboo Sharma and Avirup Dasgupta and Sudip Ghosh and Ahsan, {Sheikh Aamir} and Sourabh Khandelwal and Chauhan, {Yogesh Singh}",

year = "2015",

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doi = "10.1109/EDSSC.2015.7285160",

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pages = "499--502",

booktitle = "EDSSC 2015",

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note = "11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015 ; Conference date: 01-06-2015 Through 04-06-2015",

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Sharma, K, Dasgupta, A, Ghosh, S, Ahsan, SA, Khandelwal, S & Chauhan, YS 2015, Effect of access region and field plate on capacitance behavior of GaN HEMT. in EDSSC 2015: Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits. Institute of Electrical and Electronics Engineers (IEEE), Singapore, pp. 499-502, 11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015, Singapore, Singapore, 1/06/15. https://doi.org/10.1109/EDSSC.2015.7285160

Effect of access region and field plate on capacitance behavior of GaN HEMT. / Sharma, Khushboo; Dasgupta, Avirup; Ghosh, Sudip et al.
EDSSC 2015: Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits. Singapore: Institute of Electrical and Electronics Engineers (IEEE), 2015. p. 499-502.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

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T1 - Effect of access region and field plate on capacitance behavior of GaN HEMT

AU - Sharma, Khushboo

AU - Dasgupta, Avirup

AU - Ghosh, Sudip

AU - Ahsan, Sheikh Aamir

AU - Khandelwal, Sourabh

AU - Chauhan, Yogesh Singh

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N2 - Incorporation of Field Plate in High Electron Mobility Transistors (HEMTs) improves the device breakdown voltage but on the other hand, increases the device Capacitance. It has a direct impact on the device switching characteristics and hence the study of the capacitive behavior holds supreme importance for GaN HEMTs power switching application. Also, in GaN HEMTs, lower values of access region resistance improves the device output current but at the cost of increase in its capacitance, CGD. In this paper, using TCAD simulations on a field plated GaN HEMT, we present the physical explanation for the variation in C-V characteristics for different access region and field plate lengths.

AB - Incorporation of Field Plate in High Electron Mobility Transistors (HEMTs) improves the device breakdown voltage but on the other hand, increases the device Capacitance. It has a direct impact on the device switching characteristics and hence the study of the capacitive behavior holds supreme importance for GaN HEMTs power switching application. Also, in GaN HEMTs, lower values of access region resistance improves the device output current but at the cost of increase in its capacitance, CGD. In this paper, using TCAD simulations on a field plated GaN HEMT, we present the physical explanation for the variation in C-V characteristics for different access region and field plate lengths.

KW - Access Region

KW - Capacitance

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BT - EDSSC 2015

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Sharma K, Dasgupta A, Ghosh S, Ahsan SA, Khandelwal S, Chauhan YS. Effect of access region and field plate on capacitance behavior of GaN HEMT. In EDSSC 2015: Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits. Singapore: Institute of Electrical and Electronics Engineers (IEEE). 2015. p. 499-502 doi: 10.1109/EDSSC.2015.7285160

Effect of access region and field plate on capacitance behavior of GaN HEMT

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