Effect of active device insertion losses on the electromagnetic bandgap characteristics of a tunable 1D periodic structure in the S band

D. N. P. Thalakotuna*, L. Matekovits, K. P. Esselle, M. Heimlich

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

5 Citations (Scopus)
1 Downloads (Pure)

Abstract

Effect on the electromagnetic bandgap (EBG) of an active, tunable, EBG structure, due to the insertion loss and other scattering parameters of active switching devices, is investigated. Active FET switches are modeled two ways, first as perfect conductors with the switch packaging and secondly as a black box with embedded scattering parameters provided by the switch manufacturer. The results obtained from the simulations for the transmission characteristics of the EBG structure shows a significant downshift in the resultant electromagnetic bandgap due to the additional transmission line effects introduced by the switches.

Original languageEnglish
Title of host publication2011 IEEE International Symposium on Antennas and Propagation - Proceedings
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1808-1811
Number of pages4
ISBN (Print)9781424495634
DOIs
Publication statusPublished - 2011
Event2011 IEEE International Symposium on Antennas and Propagation and USNC/URSI National Radio Science Meeting, APSURSI 2011 - Spokane, WA, United States
Duration: 3 Jul 20118 Jul 2011

Other

Other2011 IEEE International Symposium on Antennas and Propagation and USNC/URSI National Radio Science Meeting, APSURSI 2011
CountryUnited States
CitySpokane, WA
Period3/07/118/07/11

Fingerprint Dive into the research topics of 'Effect of active device insertion losses on the electromagnetic bandgap characteristics of a tunable 1D periodic structure in the S band'. Together they form a unique fingerprint.

Cite this