Effect of active device insertion losses on the electromagnetic bandgap characteristics of a tunable 1D periodic structure in the S band

D. N. P. Thalakotuna; L. Matekovits; K. P. Esselle; M. Heimlich

doi:10.1109/APS.2011.5996847

Effect of active device insertion losses on the electromagnetic bandgap characteristics of a tunable 1D periodic structure in the S band

D. N. P. Thalakotuna^*, L. Matekovits, K. P. Esselle, M. Heimlich

^*Corresponding author for this work

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

5 Citations (Scopus)

1 Downloads (Pure)

Abstract

Effect on the electromagnetic bandgap (EBG) of an active, tunable, EBG structure, due to the insertion loss and other scattering parameters of active switching devices, is investigated. Active FET switches are modeled two ways, first as perfect conductors with the switch packaging and secondly as a black box with embedded scattering parameters provided by the switch manufacturer. The results obtained from the simulations for the transmission characteristics of the EBG structure shows a significant downshift in the resultant electromagnetic bandgap due to the additional transmission line effects introduced by the switches.

Original language	English
Title of host publication	2011 IEEE International Symposium on Antennas and Propagation - Proceedings
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1808-1811
Number of pages	4
ISBN (Print)	9781424495634
DOIs	https://doi.org/10.1109/APS.2011.5996847
Publication status	Published - 2011
Event	2011 IEEE International Symposium on Antennas and Propagation and USNC/URSI National Radio Science Meeting, APSURSI 2011 - Spokane, WA, United States Duration: 3 Jul 2011 → 8 Jul 2011

Other

Other	2011 IEEE International Symposium on Antennas and Propagation and USNC/URSI National Radio Science Meeting, APSURSI 2011
Country/Territory	United States
City	Spokane, WA
Period	3/07/11 → 8/07/11

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10.1109/APS.2011.5996847

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Thalakotuna, D. N. P., Matekovits, L., Esselle, K. P., & Heimlich, M. (2011). Effect of active device insertion losses on the electromagnetic bandgap characteristics of a tunable 1D periodic structure in the S band. In 2011 IEEE International Symposium on Antennas and Propagation - Proceedings (pp. 1808-1811). [5996847] Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/APS.2011.5996847

Thalakotuna, D. N. P. ; Matekovits, L. ; Esselle, K. P. et al. / Effect of active device insertion losses on the electromagnetic bandgap characteristics of a tunable 1D periodic structure in the S band. 2011 IEEE International Symposium on Antennas and Propagation - Proceedings. Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2011. pp. 1808-1811

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title = "Effect of active device insertion losses on the electromagnetic bandgap characteristics of a tunable 1D periodic structure in the S band",

abstract = "Effect on the electromagnetic bandgap (EBG) of an active, tunable, EBG structure, due to the insertion loss and other scattering parameters of active switching devices, is investigated. Active FET switches are modeled two ways, first as perfect conductors with the switch packaging and secondly as a black box with embedded scattering parameters provided by the switch manufacturer. The results obtained from the simulations for the transmission characteristics of the EBG structure shows a significant downshift in the resultant electromagnetic bandgap due to the additional transmission line effects introduced by the switches.",

author = "Thalakotuna, {D. N. P.} and L. Matekovits and Esselle, {K. P.} and M. Heimlich",

year = "2011",

doi = "10.1109/APS.2011.5996847",

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pages = "1808--1811",

booktitle = "2011 IEEE International Symposium on Antennas and Propagation - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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note = "2011 IEEE International Symposium on Antennas and Propagation and USNC/URSI National Radio Science Meeting, APSURSI 2011 ; Conference date: 03-07-2011 Through 08-07-2011",

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Thalakotuna, DNP, Matekovits, L, Esselle, KP & Heimlich, M 2011, Effect of active device insertion losses on the electromagnetic bandgap characteristics of a tunable 1D periodic structure in the S band. in 2011 IEEE International Symposium on Antennas and Propagation - Proceedings., 5996847, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 1808-1811, 2011 IEEE International Symposium on Antennas and Propagation and USNC/URSI National Radio Science Meeting, APSURSI 2011, Spokane, WA, United States, 3/07/11. https://doi.org/10.1109/APS.2011.5996847

Effect of active device insertion losses on the electromagnetic bandgap characteristics of a tunable 1D periodic structure in the S band. / Thalakotuna, D. N. P.; Matekovits, L.; Esselle, K. P. et al.
2011 IEEE International Symposium on Antennas and Propagation - Proceedings. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2011. p. 1808-1811 5996847.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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AU - Heimlich, M.

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AB - Effect on the electromagnetic bandgap (EBG) of an active, tunable, EBG structure, due to the insertion loss and other scattering parameters of active switching devices, is investigated. Active FET switches are modeled two ways, first as perfect conductors with the switch packaging and secondly as a black box with embedded scattering parameters provided by the switch manufacturer. The results obtained from the simulations for the transmission characteristics of the EBG structure shows a significant downshift in the resultant electromagnetic bandgap due to the additional transmission line effects introduced by the switches.

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Thalakotuna DNP, Matekovits L, Esselle KP, Heimlich M. Effect of active device insertion losses on the electromagnetic bandgap characteristics of a tunable 1D periodic structure in the S band. In 2011 IEEE International Symposium on Antennas and Propagation - Proceedings. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2011. p. 1808-1811. 5996847 doi: 10.1109/APS.2011.5996847

Effect of active device insertion losses on the electromagnetic bandgap characteristics of a tunable 1D periodic structure in the S band

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