Effect of bias and load on MESFET nonlinear characteristics

G. Passiopoulos*, D. R. Webster, A. E. Parker, D. G. Haigh, I. D. Robertson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

An investigation of the variation of measured and simulated nonlinear characteristics of a MESFET with bias and load resistance is reported. A discrete MESFET exhibits simultaneous low 2nd and 3rd order intermodulation distortion while yielding high gain and operating in its low noise region.

Original languageEnglish
Pages (from-to)741-743
Number of pages3
JournalElectronics Letters
Volume32
Issue number8
Publication statusPublished - 11 Apr 1996

Keywords

  • Linearisation techniques
  • MESFETs

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