Effect of bias and load on MESFET nonlinear characteristics

G. Passiopoulos; D. R. Webster; A. E. Parker; D. G. Haigh; I. D. Robertson

Effect of bias and load on MESFET nonlinear characteristics

G. Passiopoulos^*, D. R. Webster, A. E. Parker, D. G. Haigh, I. D. Robertson

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

An investigation of the variation of measured and simulated nonlinear characteristics of a MESFET with bias and load resistance is reported. A discrete MESFET exhibits simultaneous low 2nd and 3rd order intermodulation distortion while yielding high gain and operating in its low noise region.

Original language	English
Pages (from-to)	741-743
Number of pages	3
Journal	Electronics Letters
Volume	32
Issue number	8
Publication status	Published - 11 Apr 1996

Keywords

Linearisation techniques
MESFETs

Cite this

@article{a25c0bd2dd5f42d189b487125f65bdcf,

title = "Effect of bias and load on MESFET nonlinear characteristics",

abstract = "An investigation of the variation of measured and simulated nonlinear characteristics of a MESFET with bias and load resistance is reported. A discrete MESFET exhibits simultaneous low 2nd and 3rd order intermodulation distortion while yielding high gain and operating in its low noise region.",

keywords = "Linearisation techniques, MESFETs",

author = "G. Passiopoulos and Webster, \{D. R.\} and Parker, \{A. E.\} and Haigh, \{D. G.\} and Robertson, \{I. D.\}",

year = "1996",

month = apr,

day = "11",

language = "English",

volume = "32",

pages = "741--743",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons",

number = "8",

}

TY - JOUR

T1 - Effect of bias and load on MESFET nonlinear characteristics

AU - Passiopoulos, G.

AU - Webster, D. R.

AU - Parker, A. E.

AU - Haigh, D. G.

AU - Robertson, I. D.

PY - 1996/4/11

Y1 - 1996/4/11

N2 - An investigation of the variation of measured and simulated nonlinear characteristics of a MESFET with bias and load resistance is reported. A discrete MESFET exhibits simultaneous low 2nd and 3rd order intermodulation distortion while yielding high gain and operating in its low noise region.

AB - An investigation of the variation of measured and simulated nonlinear characteristics of a MESFET with bias and load resistance is reported. A discrete MESFET exhibits simultaneous low 2nd and 3rd order intermodulation distortion while yielding high gain and operating in its low noise region.

KW - Linearisation techniques

KW - MESFETs

UR - https://www.scopus.com/pages/publications/0030130259

M3 - Article

AN - SCOPUS:0030130259

SN - 0013-5194

VL - 32

SP - 741

EP - 743

JO - Electronics Letters

JF - Electronics Letters

IS - 8

ER -

Effect of bias and load on MESFET nonlinear characteristics

Abstract

Keywords

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