Abstract
Third order intermodulation intercept is a very important criterion in communication circuits and this paper presents a preliminary investigation of the mechanisms responsible. It is shown that interaction of the intrinsic MESFET 2nd order non-linearity with linear circuit and parasitic components can cause significant distortion. MESFET output conductance is shown to also cause an interaction effect. Hence, intercept points quite different from those predicted by standard device characterisation techniques can be obtained. Some regions of enhanced performance have been identified. Circuit topology also plays a key role in determining distortion. Some experimental results are given.
Original language | English |
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Title of host publication | 15th Annual GaAs IC Symposium |
Place of Publication | Piscataway, N.J. |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 255-258 |
Number of pages | 4 |
ISBN (Print) | 0780313933 |
Publication status | Published - Oct 1993 |
Externally published | Yes |
Event | Proceedings of the 15th Annual IEEE GaAs IC Symposium - San Jose, CA, USA Duration: 10 Oct 1993 → 13 Oct 1993 |
Other
Other | Proceedings of the 15th Annual IEEE GaAs IC Symposium |
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City | San Jose, CA, USA |
Period | 10/10/93 → 13/10/93 |