Effect of circuit parameters and topology on intermodulation in MESFET circuits

Danny R. Webster*, Anthony E. Parker, David G. Haigh, Jonathan B. Scott

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

4 Citations (Scopus)

Abstract

Third order intermodulation intercept is a very important criterion in communication circuits and this paper presents a preliminary investigation of the mechanisms responsible. It is shown that interaction of the intrinsic MESFET 2nd order non-linearity with linear circuit and parasitic components can cause significant distortion. MESFET output conductance is shown to also cause an interaction effect. Hence, intercept points quite different from those predicted by standard device characterisation techniques can be obtained. Some regions of enhanced performance have been identified. Circuit topology also plays a key role in determining distortion. Some experimental results are given.

Original languageEnglish
Title of host publication15th Annual GaAs IC Symposium
Place of PublicationPiscataway, N.J.
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages255-258
Number of pages4
ISBN (Print)0780313933
Publication statusPublished - Oct 1993
Externally publishedYes
EventProceedings of the 15th Annual IEEE GaAs IC Symposium - San Jose, CA, USA
Duration: 10 Oct 199313 Oct 1993

Other

OtherProceedings of the 15th Annual IEEE GaAs IC Symposium
CitySan Jose, CA, USA
Period10/10/9313/10/93

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