Effect of crucible materials on impurities in LPE-GaAs

L. Mo; K. S A Butcher; D. Alexiev

doi:10.1016/0022-0248(95)00895-0

Effect of crucible materials on impurities in LPE-GaAs

L. Mo, K. S A Butcher, D. Alexiev^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

LPE-GaAs grown in carbon, boron nitride and alumina crucibles has been examined using standard characterisation techniques including capacitance-voltage (C-V) measurements and deep level transient spectroscopy (DLTS). The epitaxial layers have net carrier concentration ranging from 5 × 10¹⁴ to 8 × 10¹⁵ carriers per cm³. DLTS data has shown that all epitaxial layers have deep level traps.

Original language	English
Pages (from-to)	7-12
Number of pages	6
Journal	Journal of Crystal Growth
Volume	160
Issue number	1-2
DOIs	https://doi.org/10.1016/0022-0248(95)00895-0
Publication status	Published - Mar 1996

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title = "Effect of crucible materials on impurities in LPE-GaAs",

abstract = "LPE-GaAs grown in carbon, boron nitride and alumina crucibles has been examined using standard characterisation techniques including capacitance-voltage (C-V) measurements and deep level transient spectroscopy (DLTS). The epitaxial layers have net carrier concentration ranging from 5 × 1014 to 8 × 1015 carriers per cm3. DLTS data has shown that all epitaxial layers have deep level traps.",

author = "L. Mo and Butcher, {K. S A} and D. Alexiev",

year = "1996",

month = mar,

doi = "10.1016/0022-0248(95)00895-0",

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T1 - Effect of crucible materials on impurities in LPE-GaAs

AU - Mo, L.

AU - Butcher, K. S A

AU - Alexiev, D.

PY - 1996/3

Y1 - 1996/3

N2 - LPE-GaAs grown in carbon, boron nitride and alumina crucibles has been examined using standard characterisation techniques including capacitance-voltage (C-V) measurements and deep level transient spectroscopy (DLTS). The epitaxial layers have net carrier concentration ranging from 5 × 1014 to 8 × 1015 carriers per cm3. DLTS data has shown that all epitaxial layers have deep level traps.

AB - LPE-GaAs grown in carbon, boron nitride and alumina crucibles has been examined using standard characterisation techniques including capacitance-voltage (C-V) measurements and deep level transient spectroscopy (DLTS). The epitaxial layers have net carrier concentration ranging from 5 × 1014 to 8 × 1015 carriers per cm3. DLTS data has shown that all epitaxial layers have deep level traps.

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U2 - 10.1016/0022-0248(95)00895-0

DO - 10.1016/0022-0248(95)00895-0

M3 - Article

AN - SCOPUS:0030110642

VL - 160

SP - 7

EP - 12

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-2

ER -

Effect of crucible materials on impurities in LPE-GaAs

Abstract

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