Effect of crucible materials on impurities in LPE GaAs

L. Mo, K. S A Butcher, D. Alexiev*

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

LPE GaAs grown in carbon, boron nitride and alumina crucibles has been examined using standard characterisation techniques including capacitance-voltage (C-V) measurements and deep level transient spectroscopy (DLTS). The epitaxial layers have net carrier concentrations ranging from 5 × 1014 to 8 × 1015 carriers per cm-3. DLTS data has shown that all epitaxial layers have deep level traps.

Original languageEnglish
Pages (from-to)403-408
Number of pages6
JournalJournal of Crystal Growth
Volume158
Issue number4
DOIs
Publication statusPublished - Feb 1996

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