LPE GaAs grown in carbon, boron nitride and alumina crucibles has been examined using standard characterisation techniques including capacitance-voltage (C-V) measurements and deep level transient spectroscopy (DLTS). The epitaxial layers have net carrier concentrations ranging from 5 × 1014 to 8 × 1015 carriers per cm-3. DLTS data has shown that all epitaxial layers have deep level traps.
|Number of pages||6|
|Journal||Journal of Crystal Growth|
|Publication status||Published - Feb 1996|