Effect of crucible materials on impurities in LPE GaAs

L. Mo; K. S A Butcher; D. Alexiev

doi:10.1016/0022-0248(95)00484-X

Effect of crucible materials on impurities in LPE GaAs

L. Mo, K. S A Butcher, D. Alexiev^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

LPE GaAs grown in carbon, boron nitride and alumina crucibles has been examined using standard characterisation techniques including capacitance-voltage (C-V) measurements and deep level transient spectroscopy (DLTS). The epitaxial layers have net carrier concentrations ranging from 5 × 10¹⁴ to 8 × 10¹⁵ carriers per cm^-3. DLTS data has shown that all epitaxial layers have deep level traps.

Original language	English
Pages (from-to)	403-408
Number of pages	6
Journal	Journal of Crystal Growth
Volume	158
Issue number	4
DOIs	https://doi.org/10.1016/0022-0248(95)00484-X
Publication status	Published - Feb 1996

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title = "Effect of crucible materials on impurities in LPE GaAs",

abstract = "LPE GaAs grown in carbon, boron nitride and alumina crucibles has been examined using standard characterisation techniques including capacitance-voltage (C-V) measurements and deep level transient spectroscopy (DLTS). The epitaxial layers have net carrier concentrations ranging from 5 × 1014 to 8 × 1015 carriers per cm-3. DLTS data has shown that all epitaxial layers have deep level traps.",

author = "L. Mo and Butcher, \{K. S A\} and D. Alexiev",

year = "1996",

month = feb,

doi = "10.1016/0022-0248(95)00484-X",

language = "English",

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pages = "403--408",

journal = "Journal of Crystal Growth",

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number = "4",

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T1 - Effect of crucible materials on impurities in LPE GaAs

AU - Mo, L.

AU - Butcher, K. S A

AU - Alexiev, D.

PY - 1996/2

Y1 - 1996/2

N2 - LPE GaAs grown in carbon, boron nitride and alumina crucibles has been examined using standard characterisation techniques including capacitance-voltage (C-V) measurements and deep level transient spectroscopy (DLTS). The epitaxial layers have net carrier concentrations ranging from 5 × 1014 to 8 × 1015 carriers per cm-3. DLTS data has shown that all epitaxial layers have deep level traps.

AB - LPE GaAs grown in carbon, boron nitride and alumina crucibles has been examined using standard characterisation techniques including capacitance-voltage (C-V) measurements and deep level transient spectroscopy (DLTS). The epitaxial layers have net carrier concentrations ranging from 5 × 1014 to 8 × 1015 carriers per cm-3. DLTS data has shown that all epitaxial layers have deep level traps.

UR - https://www.scopus.com/pages/publications/0030087338

U2 - 10.1016/0022-0248(95)00484-X

DO - 10.1016/0022-0248(95)00484-X

M3 - Article

AN - SCOPUS:0030087338

SN - 0022-0248

VL - 158

SP - 403

EP - 408

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 4

ER -

Effect of crucible materials on impurities in LPE GaAs

Abstract

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