Effect of growth temperature of the confinement layer on cathodoluminescence properties of GaSb/GaAs quantum dot multilayer structures

Krystyna Drozdowicz-Tomsia*, Ewa M. Goldys, Motlan

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

1 Citation (Scopus)

Abstract

Multilayer GaSb/GaAs quantum dot (QD) structures grown by atmospheric pressure metalorganic chemical deposition (MOCVD) on semi-insulating (SI) GaAs (100) substrates with varying growth temperature of the confinement layers are studied by the cathodoluminescence (CL). Two main features assigned to wetting layer (WL) and quantum dots (QD) are observed in the CL spectra. Their relative positions strongly depend on the growth conditions of the confinement layers.

Original languageEnglish
Title of host publication2004 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD04
Subtitle of host publicationProceedings
EditorsAleksandar D. Rakic, Yew Tong Yeow
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages5-8
Number of pages4
ISBN (Print)0780388208
DOIs
Publication statusPublished - 2005
EventCOMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices - Bribane, QLD, Australia
Duration: 8 Dec 200410 Dec 2004

Other

OtherCOMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices
CountryAustralia
CityBribane, QLD
Period8/12/0410/12/04

Keywords

  • AFM
  • Cathodoluminescence
  • GaSb
  • MOCVD growth
  • Quantum dot
  • Wetting layer

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