Effect of growth temperature of the confinement layer on cathodoluminescence properties of GaSb/GaAs quantum dot multilayer structures

Krystyna Drozdowicz-Tomsia; Ewa M. Goldys; Motlan

doi:10.1109/COMMAD.2004.1577478

Effect of growth temperature of the confinement layer on cathodoluminescence properties of GaSb/GaAs quantum dot multilayer structures

Krystyna Drozdowicz-Tomsia^*, Ewa M. Goldys, Motlan

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

1 Citation (Scopus)

Abstract

Multilayer GaSb/GaAs quantum dot (QD) structures grown by atmospheric pressure metalorganic chemical deposition (MOCVD) on semi-insulating (SI) GaAs (100) substrates with varying growth temperature of the confinement layers are studied by the cathodoluminescence (CL). Two main features assigned to wetting layer (WL) and quantum dots (QD) are observed in the CL spectra. Their relative positions strongly depend on the growth conditions of the confinement layers.

Original language	English
Title of host publication	2004 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD04
Subtitle of host publication	Proceedings
Editors	Aleksandar D. Rakic, Yew Tong Yeow
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	5-8
Number of pages	4
ISBN (Print)	0780388208
DOIs	https://doi.org/10.1109/COMMAD.2004.1577478
Publication status	Published - 2005
Event	COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices - Bribane, QLD, Australia Duration: 8 Dec 2004 → 10 Dec 2004

Other

Other	COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices
Country/Territory	Australia
City	Bribane, QLD
Period	8/12/04 → 10/12/04

Keywords

AFM
Cathodoluminescence
GaSb
MOCVD growth
Quantum dot
Wetting layer

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10.1109/COMMAD.2004.1577478

Cite this

Drozdowicz-Tomsia, K., Goldys, E. M., & Motlan (2005). Effect of growth temperature of the confinement layer on cathodoluminescence properties of GaSb/GaAs quantum dot multilayer structures. In A. D. Rakic, & Y. T. Yeow (Eds.), 2004 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD04: Proceedings (pp. 5-8). Article 1577478 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/COMMAD.2004.1577478

Drozdowicz-Tomsia, Krystyna ; Goldys, Ewa M. ; Motlan. / Effect of growth temperature of the confinement layer on cathodoluminescence properties of GaSb/GaAs quantum dot multilayer structures. 2004 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD04: Proceedings. editor / Aleksandar D. Rakic ; Yew Tong Yeow. Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2005. pp. 5-8

@inproceedings{82987a1d861e45858d8c659b3f2c50f6,

title = "Effect of growth temperature of the confinement layer on cathodoluminescence properties of GaSb/GaAs quantum dot multilayer structures",

abstract = "Multilayer GaSb/GaAs quantum dot (QD) structures grown by atmospheric pressure metalorganic chemical deposition (MOCVD) on semi-insulating (SI) GaAs (100) substrates with varying growth temperature of the confinement layers are studied by the cathodoluminescence (CL). Two main features assigned to wetting layer (WL) and quantum dots (QD) are observed in the CL spectra. Their relative positions strongly depend on the growth conditions of the confinement layers.",

keywords = "AFM, Cathodoluminescence, GaSb, MOCVD growth, Quantum dot, Wetting layer",

author = "Krystyna Drozdowicz-Tomsia and Goldys, \{Ewa M.\} and Motlan",

year = "2005",

doi = "10.1109/COMMAD.2004.1577478",

language = "English",

isbn = "0780388208",

pages = "5--8",

editor = "Rakic, \{Aleksandar D.\} and Yeow, \{Yew Tong\}",

booktitle = "2004 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD04",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices ; Conference date: 08-12-2004 Through 10-12-2004",

}

Drozdowicz-Tomsia, K, Goldys, EM & Motlan 2005, Effect of growth temperature of the confinement layer on cathodoluminescence properties of GaSb/GaAs quantum dot multilayer structures. in AD Rakic & YT Yeow (eds), 2004 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD04: Proceedings., 1577478, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 5-8, COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices, Bribane, QLD, Australia, 8/12/04. https://doi.org/10.1109/COMMAD.2004.1577478

Effect of growth temperature of the confinement layer on cathodoluminescence properties of GaSb/GaAs quantum dot multilayer structures. / Drozdowicz-Tomsia, Krystyna; Goldys, Ewa M.; Motlan.
2004 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD04: Proceedings. ed. / Aleksandar D. Rakic; Yew Tong Yeow. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2005. p. 5-8 1577478.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Effect of growth temperature of the confinement layer on cathodoluminescence properties of GaSb/GaAs quantum dot multilayer structures

AU - Drozdowicz-Tomsia, Krystyna

AU - Goldys, Ewa M.

AU - Motlan, null

PY - 2005

Y1 - 2005

N2 - Multilayer GaSb/GaAs quantum dot (QD) structures grown by atmospheric pressure metalorganic chemical deposition (MOCVD) on semi-insulating (SI) GaAs (100) substrates with varying growth temperature of the confinement layers are studied by the cathodoluminescence (CL). Two main features assigned to wetting layer (WL) and quantum dots (QD) are observed in the CL spectra. Their relative positions strongly depend on the growth conditions of the confinement layers.

AB - Multilayer GaSb/GaAs quantum dot (QD) structures grown by atmospheric pressure metalorganic chemical deposition (MOCVD) on semi-insulating (SI) GaAs (100) substrates with varying growth temperature of the confinement layers are studied by the cathodoluminescence (CL). Two main features assigned to wetting layer (WL) and quantum dots (QD) are observed in the CL spectra. Their relative positions strongly depend on the growth conditions of the confinement layers.

KW - AFM

KW - Cathodoluminescence

KW - GaSb

KW - MOCVD growth

KW - Quantum dot

KW - Wetting layer

UR - https://www.scopus.com/pages/publications/46149086361

U2 - 10.1109/COMMAD.2004.1577478

DO - 10.1109/COMMAD.2004.1577478

M3 - Conference proceeding contribution

AN - SCOPUS:46149086361

SN - 0780388208

SP - 5

EP - 8

BT - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD04

A2 - Rakic, Aleksandar D.

A2 - Yeow, Yew Tong

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices

Y2 - 8 December 2004 through 10 December 2004

ER -

Drozdowicz-Tomsia K, Goldys EM, Motlan. Effect of growth temperature of the confinement layer on cathodoluminescence properties of GaSb/GaAs quantum dot multilayer structures. In Rakic AD, Yeow YT, editors, 2004 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD04: Proceedings. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2005. p. 5-8. 1577478 doi: 10.1109/COMMAD.2004.1577478

Effect of growth temperature of the confinement layer on cathodoluminescence properties of GaSb/GaAs quantum dot multilayer structures

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