Abstract
This work presents a description of the nonlinear behaviour of the cold FET. A characterization technique is described together with typical measurements. The work describes key weaknesses in popular simulator models that prevent realistic simulation of 3rd order intermodulation distortion performance of cold FET attenuators, mixers and switches. This includes a previously undescribed derivative discontinuity peculiar to the cold FET condition.
Original language | English |
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Title of host publication | Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO |
Place of Publication | New York |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 97-102 |
Number of pages | 6 |
ISBN (Print) | 078034135X |
Publication status | Published - 1997 |
Externally published | Yes |
Event | Proceedings of the 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO - London, UK Duration: 24 Nov 1997 → 25 Nov 1997 |
Other
Other | Proceedings of the 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO |
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City | London, UK |
Period | 24/11/97 → 25/11/97 |