@inproceedings{b5b269a0f4474f81bb596c0433b2753a,
title = "Effect of silicon front surface doping profile on GaP/Si heterostructure for III-V/GaP/Si multi-junction solar cells",
abstract = " For optimizing III-V/GaP/Si tandem cells, test samples are fabricated featuring an epitaxial GaP layer on top of p-type front junction and n-type rear junction silicon cells. The device characterization results are used to calibrate our Sentaurus model and the interface recombination velocity between GaP and Si is found to be 5 × 10 4 cm/s by fitting the EQE data. To achieve a better spectral response for the silicon bottom cell, numerical simulation indicates that the GaP/p-Si cell prefers a shallow front junction depth within 0.25 μ m while the GaP/n-Si cell requires an intermediate junction depth of 2-4 μ m. Index Terms - GaP/Si interface recombination, multi-junction solar cell, silicon doping profiles, III-V/Si solar cell. ",
author = "Chuqi Yi and Fa-Jun Ma and Hamid Mehrvarz and Daniel Lepkowski and Jacob Boyer and Daniel Chmielewski and Carlin, {John A.} and Ringel, {Steven A.} and Grassman, {Tyler J.} and Anita Ho-Baillie and Stephen Bremner",
year = "2018",
doi = "10.1109/PVSC.2018.8547600",
language = "English",
isbn = "9781538685303",
publisher = "Institute of Electrical and Electronics Engineers (IEEE)",
pages = "275--278",
booktitle = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC)",
address = "United States",
note = "7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 ; Conference date: 10-06-2018 Through 15-06-2018",
}