Effect of silicon front surface doping profile on GaP/Si heterostructure for III-V/GaP/Si multi-junction solar cells

Chuqi Yi, Fa-Jun Ma, Hamid Mehrvarz, Daniel Lepkowski, Jacob Boyer, Daniel Chmielewski, John A. Carlin, Steven A. Ringel, Tyler J. Grassman, Anita Ho-Baillie, Stephen Bremner

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

2 Citations (Scopus)

Abstract

For optimizing III-V/GaP/Si tandem cells, test samples are fabricated featuring an epitaxial GaP layer on top of p-type front junction and n-type rear junction silicon cells. The device characterization results are used to calibrate our Sentaurus model and the interface recombination velocity between GaP and Si is found to be 5 × 10 4 cm/s by fitting the EQE data. To achieve a better spectral response for the silicon bottom cell, numerical simulation indicates that the GaP/p-Si cell prefers a shallow front junction depth within 0.25 μ m while the GaP/n-Si cell requires an intermediate junction depth of 2-4 μ m. Index Terms - GaP/Si interface recombination, multi-junction solar cell, silicon doping profiles, III-V/Si solar cell.

Original languageEnglish
Title of host publication2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages275-278
Number of pages4
ISBN (Electronic)9781538685297
ISBN (Print)9781538685303
DOIs
Publication statusPublished - 2018
Externally publishedYes
Event7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States
Duration: 10 Jun 201815 Jun 2018

Publication series

Name
ISSN (Print)0160-8371

Conference

Conference7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
CountryUnited States
CityWaikoloa Village
Period10/06/1815/06/18

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