Effective width modeling for body-contacted devices in Silicon-on-Insulator technology

S. Khandelwal*, E. Tamilmani, K. Shanbhaag, J. Watts

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

1 Citation (Scopus)

Abstract

Effective width of a body-contacted MOSFET depends on the width offset, which comes from the specific layout one needs in Silicon-on-Insulator technology to contact the body node of these devices. This paper demonstrates and models the length dependence of the mentioned width-offset for 0.18 μm technology. The length dependence of width-offset is demonstrated by a simple technique of comparing linear currents of identical body-contacted and floating-body device for thick-oxide devices. Similar demonstration for thin-oxide devices is done by comparing maximum linear transcon-ductance (peak gm) of identical body contacted and floating body devices. This work then goes on to model this phenomenon semi-empirically. The improvement in the fits obtained with the proposed model over existing model validates it.

Original languageEnglish
Title of host publicationTechnical Proceedings of the 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009
Place of PublicationBoston, MA
PublisherNano Science and Technology Institute
Pages562-565
Number of pages4
Volume3
ISBN (Print)9781439817834, 9781439817841
Publication statusPublished - 2009
Externally publishedYes
EventNanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling - 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009 - Houston, TX, United States
Duration: 3 May 20097 May 2009

Other

OtherNanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling - 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009
CountryUnited States
CityHouston, TX
Period3/05/097/05/09

Keywords

  • Body-contact
  • Floating body
  • SOI
  • Width-offset

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