Abstract
Effective width of a body-contacted MOSFET depends on the width offset, which comes from the specific layout one needs in Silicon-on-Insulator technology to contact the body node of these devices. This paper demonstrates and models the length dependence of the mentioned width-offset for 0.18 μm technology. The length dependence of width-offset is demonstrated by a simple technique of comparing linear currents of identical body-contacted and floating-body device for thick-oxide devices. Similar demonstration for thin-oxide devices is done by comparing maximum linear transcon-ductance (peak gm) of identical body contacted and floating body devices. This work then goes on to model this phenomenon semi-empirically. The improvement in the fits obtained with the proposed model over existing model validates it.
| Original language | English |
|---|---|
| Title of host publication | Technical Proceedings of the 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009 |
| Place of Publication | Boston, MA |
| Publisher | Nano Science and Technology Institute |
| Pages | 562-565 |
| Number of pages | 4 |
| Volume | 3 |
| ISBN (Print) | 9781439817834, 9781439817841 |
| Publication status | Published - 2009 |
| Externally published | Yes |
| Event | Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling - 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009 - Houston, TX, United States Duration: 3 May 2009 → 7 May 2009 |
Other
| Other | Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling - 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009 |
|---|---|
| Country/Territory | United States |
| City | Houston, TX |
| Period | 3/05/09 → 7/05/09 |
Keywords
- Body-contact
- Floating body
- SOI
- Width-offset