We examine the impacts of hydrogenation and phosphorus gettering steps on the deep-level photoluminescence spectra of dislocations and the surrounding regions in multicrystalline silicon wafers, using micro-photoluminescence spectroscopy with micron-scale spatial resolution. We found that the D1 line, originating from secondary defects around dislocation sites, was enhanced significantly after gettering but remained unchanged after hydrogenation, suggesting that the former process reduced the concentration of metal impurities around the dislocations while the latter process did not alter the relevant properties ofdefects and impurities. In addition, the D3 and D4 intensities were found to be unchanged after different processing steps, indicating that the intrinsic structure of the dislocations was not affected by the investigated processes. Finally, we report empirical evidence supporting the hypothesis that D3 is not the phonon replica of D4 due to their different intensity ratio at different locations in the wafers.
|Number of pages||7|
|Publication status||Published - 2015|
|Event||International conference on silicon photovoltaics (5th : 2015) - Constance, Germany|
Duration: 23 Mar 2015 → 25 Mar 2015
Bibliographical noteCopyright the Author(s) 2015. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.
- Crystalline silicon
- deep level
- grain boundaries
- photoluminescence (PL)
- photovoltaic cells