Electrical noise characterization of n-type-doped Distributed Bragg Mirrors

G. Belleville; P. Signoret; B. Orsal; M. Wintrebert-Fouquet; A. Plais; J. Jacquet

Electrical noise characterization of n-type-doped Distributed Bragg Mirrors

G. Belleville^*, P. Signoret, B. Orsal, M. Wintrebert-Fouquet, A. Plais, J. Jacquet

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

Static and electrical noise characterization of two different n-type-doped semiconductor distributed Bragg reflectors (DBR) are presented, which are grown on InP substrate. The material systems are GaAs/AlAs and InGaAsP/InP. The current versus voltage characteristics show a nonlinear behavior for the GaAs/AlAs system and a nearly linear characteristic for InGaAsP/InP system.

Original language	English
Title of host publication	Conference on Lasers and Electro-Optics Europe - Technical Digest
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	220
Number of pages	1
Publication status	Published - 2000
Event	2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) - Nice, France Duration: 10 Sep 2000 → 15 Sep 2000

Other

Other	2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000)
City	Nice, France
Period	10/09/00 → 15/09/00

Cite this

@inproceedings{54712965da5b40d5b3026060d71e418b,

title = "Electrical noise characterization of n-type-doped Distributed Bragg Mirrors",

abstract = "Static and electrical noise characterization of two different n-type-doped semiconductor distributed Bragg reflectors (DBR) are presented, which are grown on InP substrate. The material systems are GaAs/AlAs and InGaAsP/InP. The current versus voltage characteristics show a nonlinear behavior for the GaAs/AlAs system and a nearly linear characteristic for InGaAsP/InP system.",

author = "G. Belleville and P. Signoret and B. Orsal and M. Wintrebert-Fouquet and A. Plais and J. Jacquet",

year = "2000",

language = "English",

pages = "220",

booktitle = "Conference on Lasers and Electro-Optics Europe - Technical Digest",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) ; Conference date: 10-09-2000 Through 15-09-2000",

}

Belleville, G, Signoret, P, Orsal, B, Wintrebert-Fouquet, M, Plais, A & Jacquet, J 2000, Electrical noise characterization of n-type-doped Distributed Bragg Mirrors. in Conference on Lasers and Electro-Optics Europe - Technical Digest. Institute of Electrical and Electronics Engineers (IEEE), pp. 220, 2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000), Nice, France, 10/09/00.

Electrical noise characterization of n-type-doped Distributed Bragg Mirrors. / Belleville, G.; Signoret, P.; Orsal, B.; Wintrebert-Fouquet, M.; Plais, A.; Jacquet, J.

Conference on Lasers and Electro-Optics Europe - Technical Digest. Institute of Electrical and Electronics Engineers (IEEE), 2000. p. 220.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Electrical noise characterization of n-type-doped Distributed Bragg Mirrors

AU - Belleville, G.

AU - Signoret, P.

AU - Orsal, B.

AU - Wintrebert-Fouquet, M.

AU - Plais, A.

AU - Jacquet, J.

PY - 2000

Y1 - 2000

N2 - Static and electrical noise characterization of two different n-type-doped semiconductor distributed Bragg reflectors (DBR) are presented, which are grown on InP substrate. The material systems are GaAs/AlAs and InGaAsP/InP. The current versus voltage characteristics show a nonlinear behavior for the GaAs/AlAs system and a nearly linear characteristic for InGaAsP/InP system.

AB - Static and electrical noise characterization of two different n-type-doped semiconductor distributed Bragg reflectors (DBR) are presented, which are grown on InP substrate. The material systems are GaAs/AlAs and InGaAsP/InP. The current versus voltage characteristics show a nonlinear behavior for the GaAs/AlAs system and a nearly linear characteristic for InGaAsP/InP system.

UR - http://www.scopus.com/inward/record.url?scp=0033713329&partnerID=8YFLogxK

M3 - Conference proceeding contribution

AN - SCOPUS:0033713329

SP - 220

BT - Conference on Lasers and Electro-Optics Europe - Technical Digest

PB - Institute of Electrical and Electronics Engineers (IEEE)

T2 - 2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000)

Y2 - 10 September 2000 through 15 September 2000

ER -

Electrical noise characterization of n-type-doped Distributed Bragg Mirrors

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