Electrical noise characterization of n-type-doped Distributed Bragg Mirrors

G. Belleville*, P. Signoret, B. Orsal, M. Wintrebert-Fouquet, A. Plais, J. Jacquet

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

    Abstract

    Static and electrical noise characterization of two different n-type-doped semiconductor distributed Bragg reflectors (DBR) are presented, which are grown on InP substrate. The material systems are GaAs/AlAs and InGaAsP/InP. The current versus voltage characteristics show a nonlinear behavior for the GaAs/AlAs system and a nearly linear characteristic for InGaAsP/InP system.

    Original languageEnglish
    Title of host publicationConference on Lasers and Electro-Optics Europe - Technical Digest
    PublisherInstitute of Electrical and Electronics Engineers (IEEE)
    Pages220
    Number of pages1
    Publication statusPublished - 2000
    Event2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) - Nice, France
    Duration: 10 Sept 200015 Sept 2000

    Other

    Other2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000)
    CityNice, France
    Period10/09/0015/09/00

    Fingerprint

    Dive into the research topics of 'Electrical noise characterization of n-type-doped Distributed Bragg Mirrors'. Together they form a unique fingerprint.

    Cite this