Electrical noise characterization of n-type-doped Distributed Bragg Mirrors

G. Belleville*, P. Signoret, B. Orsal, M. Wintrebert-Fouquet, A. Plais, J. Jacquet

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

Static and electrical noise characterization of two different n-type-doped semiconductor distributed Bragg reflectors (DBR) are presented, which are grown on InP substrate. The material systems are GaAs/AlAs and InGaAsP/InP. The current versus voltage characteristics show a nonlinear behavior for the GaAs/AlAs system and a nearly linear characteristic for InGaAsP/InP system.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics Europe - Technical Digest
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages220
Number of pages1
Publication statusPublished - 2000
Event2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) - Nice, France
Duration: 10 Sep 200015 Sep 2000

Other

Other2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000)
CityNice, France
Period10/09/0015/09/00

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